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Paper Abstract and Keywords
Presentation 2008-01-11 13:00
Nonvolatile ferroelectric memories using organic transistor structures
Koichiro Zaitsu, Tsuyoshi Sekitani, Kiyoshiro Ishibe, Takao Someya (Univ. of Tokyo) OME2007-68
Abstract (in Japanese) (See Japanese page) 
(in English) We have successfully fabricated air-stable organic nonvolatile memories comprising ferroelectric field-effect transistors on plastic substrates. Using a ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer as a gate insulator, we have obtained large hysteresis in transistor switching and realized bistable states in channel conductivity with high "1" and low "0".
Organic memories have thus far had the problem of degradation in ambient air. In this study, the passivation method using parylene and metal multiple layers has successfully improved memory data retention in air. The "1"/"0" current ratio in memory transistors exceeds 1000 in air. High ratio above 100 is obtained when they are stored for 25 days in nitrogen atmosphere although voltages are not applied. Furthermore, in air our memory devices show high "1"/"0" ratio above 500 after 15 days, and the variation is suppressed within 7% compared to nitrogen atmosphere. This result clearly demonstrates that our organic devices are excellent nonvolatile memories with high air-stability.
Keyword (in Japanese) (See Japanese page) 
(in English) Organic transistor / Nonvolatile memory / FeRAM / P(VDF-TrFE) / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 412, OME2007-68, pp. 1-6, Jan. 2008.
Paper # OME2007-68 
Date of Issue 2008-01-04 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OME  
Conference Date 2008-01-11 - 2008-01-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) organic materials and devices, etc. 
Paper Information
Registration To OME 
Conference Code 2008-01-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nonvolatile ferroelectric memories using organic transistor structures 
Sub Title (in English)  
Keyword(1) Organic transistor  
Keyword(2) Nonvolatile memory  
Keyword(3) FeRAM  
Keyword(4) P(VDF-TrFE)  
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1st Author's Name Koichiro Zaitsu  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Tsuyoshi Sekitani  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Kiyoshiro Ishibe  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Takao Someya  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2008-01-11 13:00:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2007-68 
Volume (vol) vol.107 
Number (no) no.412 
Page pp.1-6 
#Pages 6 
Date of Issue 2008-01-04 (OME) 

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