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Paper Abstract and Keywords
Presentation 2008-01-16 13:25
Surface passivation of GaN using electorchemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138
Abstract (in Japanese) (See Japanese page) 
(in English) The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cyclic voltammetry measurement. As the oxidation bias voltage, the combination of ramp and constant bias form was used, which prevent the surface from roughening. After the process, it was confirmed by XPS and AES that the surface was area-selectively oxidized. Cross-sectional TEM observation revealed the composition of the oxide layer was the mixture of poly crystal and amorphous of gallium oxides. The formed oxide was about 70-100nm-thick. We tried to estimate the oxide thickness using total charge value during the oxidation process. The actual thickness of oxide layer was proved to be about 1/6 of the estimated value. Finally, the feasibility of the oxidation technique for surface passivation was investigated using photoluminescence measurement.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / anodic oxidation / photoelectrochemical / glycol solution / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 420, ED2007-207, pp. 7-10, Jan. 2008.
Paper # ED2007-207 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-207 MW2007-138

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface passivation of GaN using electorchemical process 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) anodic oxidation  
Keyword(3) photoelectrochemical  
Keyword(4) glycol solution  
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Keyword(6)  
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1st Author's Name Nanako Shiozaki  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tamotsu Hashizume  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2008-01-16 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-207, MW2007-138 
Volume (vol) vol.107 
Number (no) no.420(ED), no.421(MW) 
Page pp.7-10 
#Pages 4 
Date of Issue 2008-01-09 (ED, MW) 

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