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Paper Abstract and Keywords
Presentation 2008-01-30 14:20
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope
Maciej Ligowski (Shizuoka Univ./Warsaw Univ. of Tech.), Ratno Nuryadi, Akihiro Ichiraku, Miftahul Anwar (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2007-239 SDM2007-250
Abstract (in Japanese) (See Japanese page) 
(in English) Dopant ionization was investigated by Kelvin Probe Force Microscope (KFM) measurements of surface potential of the thin silicon-on-insulator field-effect-transistor (SOI-FET) at different temperatures. In the resultant images it is observed that the surface potential is modulated by the temperature which indicates that the number of ionized dopant is changing. Also complementary simulation based on Poisson equation was performed. The results are qualitatively in agreement with the measured values. They show decreasing number of carriers when temperature is lowered. This result and interpretation are consistent with the previous freeze-out effect studies. However, direct observation of freeze-out effect hasn稚 been reported yet. We believe this is a significant progress towards single dopant observation.
Keyword (in Japanese) (See Japanese page) 
(in English) dopant ionization / freeze-out effect / KFM / Kelvin Probe Force Microscope / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 474, SDM2007-250, pp. 11-16, Jan. 2008.
Paper # SDM2007-250 
Date of Issue 2008-01-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED SDM  
Conference Date 2008-01-30 - 2008-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2008-01-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope 
Sub Title (in English)  
Keyword(1) dopant ionization  
Keyword(2) freeze-out effect  
Keyword(3) KFM  
Keyword(4) Kelvin Probe Force Microscope  
Keyword(5)  
Keyword(6)  
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1st Author's Name Maciej Ligowski  
1st Author's Affiliation Shizuoka University (Shizuoka Univ./Warsaw Univ. of Tech.)
2nd Author's Name Ratno Nuryadi  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Akihiro Ichiraku  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Miftahul Anwar  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Ryszard Jablonski  
5th Author's Affiliation Warsaw University Of Technology (Warsaw Univ. of Tech.)
6th Author's Name Michiharu Tabe  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2008-01-30 14:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2007-239, SDM2007-250 
Volume (vol) vol.107 
Number (no) no.473(ED), no.474(SDM) 
Page pp.11-16 
#Pages 6 
Date of Issue 2008-01-23 (ED, SDM) 

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