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Paper Abstract and Keywords
Presentation 2008-01-30 15:55
Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions
Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253
Abstract (in Japanese) (See Japanese page) 
(in English) The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We fabricated InAs/AlGaSb three-terminal ballistic junction devices composed of three quantum wires, and characterised electron transport properties with scanning the voltage on the left branch while keeping the voltage on the right constant at 77K and 300K. In these structures, we observed clear nonlinearity in the output voltage measured at the central branch. The nonlinear characteristics agreed well with a theoretical prediction. When the left branch is biased to a finite voltage V and the right to a voltage of –V (push-pull fashion), negative voltages appeared at the central branch regardless of the polarity of V.
Keyword (in Japanese) (See Japanese page) 
(in English) InAs/AlGaSb heterostructures / Ballistic electron transport / Nonlinear electron transport / Quantum wire / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 473, ED2007-242, pp. 29-32, Jan. 2008.
Paper # ED2007-242 
Date of Issue 2008-01-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-242 SDM2007-253

Conference Information
Committee ED SDM  
Conference Date 2008-01-30 - 2008-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2008-01-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions 
Sub Title (in English)  
Keyword(1) InAs/AlGaSb heterostructures  
Keyword(2) Ballistic electron transport  
Keyword(3) Nonlinear electron transport  
Keyword(4) Quantum wire  
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1st Author's Name Masatoshi Koyama  
1st Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
2nd Author's Name Tatsuya Inoue  
2nd Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
3rd Author's Name Naoki Amano  
3rd Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
4th Author's Name Kenji Fujiwara  
4th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
5th Author's Name Toshihiko Maemoto  
5th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
6th Author's Name Shigehiko Sasa  
6th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
7th Author's Name Masataka Inoue  
7th Author's Affiliation Osaka Institute of Technology (Osaka Inst. Tech.)
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Speaker Author-1 
Date Time 2008-01-30 15:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-242, SDM2007-253 
Volume (vol) vol.107 
Number (no) no.473(ED), no.474(SDM) 
Page pp.29-32 
#Pages 4 
Date of Issue 2008-01-23 (ED, SDM) 

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