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Paper Abstract and Keywords
Presentation 2008-01-31 09:00
Development of high-efficiency thermoelectric devices using Si nanostructures
Hiroya Ikeda, Naomi Yamashita (Shizuoka Univ.) ED2007-244 SDM2007-255
Abstract (in Japanese) (See Japanese page) 
(in English) In order to obtain the thermoelectric characteristics enough for practical use, we make use of nanostructures in the thermoelectric devices. In this study, we measure the Seebeck coefficient and electrical conductivity of 2-dimensional (2D) Si slab structures fabricated on SOI (silicon on insulator) wafers, and we discuss the effect of the electron confinement on the thermoelectric characteristics. It is found that a 3-nm-thick SOI sample has a higher Seebeck coefficient comparing to other samples with SOI thickness above 6 nm. This result suggests that the Seebeck coefficient can be enhanced due to the electron confinement in a 2D quantum well for the SOI samples as thin as 3 nm.
Keyword (in Japanese) (See Japanese page) 
(in English) thermoelectric device / nanostructure / Seebeck coefficient / silicon on insulator / electron confinement / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 474, SDM2007-255, pp. 39-42, Jan. 2008.
Paper # SDM2007-255 
Date of Issue 2008-01-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-244 SDM2007-255

Conference Information
Committee ED SDM  
Conference Date 2008-01-30 - 2008-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2008-01-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of high-efficiency thermoelectric devices using Si nanostructures 
Sub Title (in English)  
Keyword(1) thermoelectric device  
Keyword(2) nanostructure  
Keyword(3) Seebeck coefficient  
Keyword(4) silicon on insulator  
Keyword(5) electron confinement  
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Keyword(8)  
1st Author's Name Hiroya Ikeda  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Naomi Yamashita  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2008-01-31 09:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2007-244, SDM2007-255 
Volume (vol) vol.107 
Number (no) no.473(ED), no.474(SDM) 
Page pp.39-42 
#Pages 4 
Date of Issue 2008-01-23 (ED, SDM) 

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