Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-04-11 14:05
Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors
Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bias stress, remarkable threshold voltage shift was observed depending on gate voltage or gate size. Large gate voltage and large gate size enhanced the threshold voltage shift. However, no degradation was observed in S parameters or field effect mobility. Noticeable was that this mode was not affected by drain bias or drain current. Furthermore, this degradation was recovered just after removing the stress without thermal heating or electrical stress. We proposed new electron traps generated at low energy level in wide band gap which is peculiar in oxide semiconductors such as ZnO.
Keyword (in Japanese) (See Japanese page) 
(in English) thin film transistor / Ga2O3-In2O3-ZnO / reliability / degradation / threshold voltage stress / recovery / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 1, SDM2008-10, pp. 47-50, April 2008.
Paper # SDM2008-10 
Date of Issue 2008-04-04 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-10 OME2008-10

Conference Information
Committee SDM OME  
Conference Date 2008-04-11 - 2008-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, and Applications and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2008-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors 
Sub Title (in English)  
Keyword(1) thin film transistor  
Keyword(2) Ga2O3-In2O3-ZnO  
Keyword(3) reliability  
Keyword(4) degradation  
Keyword(5) threshold voltage stress  
Keyword(6) recovery  
Keyword(7)  
Keyword(8)  
1st Author's Name Mami Fujii  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Hiroshi Yano  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Tomoaki Hatayama  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Yukiharu Uraoka  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takashi Fuyuki  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Ji Sim Jung  
6th Author's Affiliation Sumsung Advenced Institute of Technology (Sumsung Advenced Institute of Technology)
7th Author's Name Jang Yeon Kwon  
7th Author's Affiliation Sumsung Advenced Institute of Technology (Sumsung Advenced Institute of Technology)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-04-11 14:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-10, OME2008-10 
Volume (vol) vol.108 
Number (no) no.1(SDM), no.2(OME) 
Page pp.47-50 
#Pages 4 
Date of Issue 2008-04-04 (SDM, OME) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan