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Paper Abstract and Keywords
Presentation 2008-04-12 11:00
Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization
Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.) SDM2008-19 OME2008-19
Abstract (in Japanese) (See Japanese page) 
(in English) The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.
Keyword (in Japanese) (See Japanese page) 
(in English) AIC / Polycrystalline Si / TEM / In-situ heating observation / STEM-EDS / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 1, SDM2008-19, pp. 95-100, April 2008.
Paper # SDM2008-19 
Date of Issue 2008-04-04 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-19 OME2008-19

Conference Information
Committee SDM OME  
Conference Date 2008-04-11 - 2008-04-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, and Applications and Others related to SDM and OME activity 
Paper Information
Registration To SDM 
Conference Code 2008-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization 
Sub Title (in English)  
Keyword(1) AIC  
Keyword(2) Polycrystalline Si  
Keyword(3) TEM  
Keyword(4) In-situ heating observation  
Keyword(5) STEM-EDS  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ken-ichi Ikeda  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Takeshi Hirota  
2nd Author's Affiliation Mitsubishi Heavy Industries Ltd. (Mitsubishi Heavy Industries Ltd.)
3rd Author's Name Kensuke Fujimoto  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Youhei Sugimoto  
4th Author's Affiliation Seiko Epson Corp. (Seiko Epson Corp.)
5th Author's Name Naoki Takata  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
6th Author's Name Seiichiro Ii  
6th Author's Affiliation Sojo University (Sojo Univ.)
7th Author's Name Hideharu Nakashima  
7th Author's Affiliation Kyushu University (Kyushu Univ.)
8th Author's Name Hiroshi Nakashima  
8th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2008-04-12 11:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-19, OME2008-19 
Volume (vol) vol.108 
Number (no) no.1(SDM), no.2(OME) 
Page pp.95-100 
#Pages 6 
Date of Issue 2008-04-04 (SDM, OME) 

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