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| Presentation | 2008-04-12 11:00 Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization Ken-ichi Ikeda (Kyushu Univ.), Takeshi Hirota (Mitsubishi Heavy Industries Ltd.), Kensuke Fujimoto (Kyushu Univ.), Youhei Sugimoto (Seiko Epson Corp.), Naoki Takata (Tokyo Inst. Tech.), Seiichiro Ii (Sojo Univ.), Hideharu Nakashima, Hiroshi Nakashima (Kyushu Univ.)  SDM2008-19 OME2008-19 Link to ES Tech. Rep. Archives: SDM2008-19 OME2008-19 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AIC / Polycrystalline Si / TEM / In-situ heating observation / STEM-EDS / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-19, pp. 95-100, April 2008. | |
| Paper # | SDM2008-19 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-19 OME2008-19 Link to ES Tech. Rep. Archives: SDM2008-19 OME2008-19 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Microstructural Analysis of Polycrystalline Silicon Thin Films Formation Behavior during Aluminum Induced Crystallization |
| Sub Title (in English) | |
| Keyword(1) | AIC |
| Keyword(2) | Polycrystalline Si |
| Keyword(3) | TEM |
| Keyword(4) | In-situ heating observation |
| Keyword(5) | STEM-EDS |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ken-ichi Ikeda |
| 1st Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 2nd Author's Name | Takeshi Hirota |
| 2nd Author's Affiliation | Mitsubishi Heavy Industries Ltd. (Mitsubishi Heavy Industries Ltd.) |
| 3rd Author's Name | Kensuke Fujimoto |
| 3rd Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 4th Author's Name | Youhei Sugimoto |
| 4th Author's Affiliation | Seiko Epson Corp. (Seiko Epson Corp.) |
| 5th Author's Name | Naoki Takata |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. Tech.) |
| 6th Author's Name | Seiichiro Ii |
| 6th Author's Affiliation | Sojo University (Sojo Univ.) |
| 7th Author's Name | Hideharu Nakashima |
| 7th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 8th Author's Name | Hiroshi Nakashima |
| 8th Author's Affiliation | Kyushu University (Kyushu Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-04-12 11:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-19, OME2008-19 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.95-100 |
| #Pages | 6 |
| Date of Issue | 2008-04-04 (SDM, OME) |
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