| Paper Abstract and Keywords |
| Presentation |
2008-04-18 13:55
A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, Hiroaki Honjo, Shinsaku Saito, Yuko Kato, Naoki Kasai (NEC) ICD2008-12 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We propose an MRAM macro architecture for SoCs to reduce their area size. The shared write-selection transistor (SWST) architecture is based on 2T1MTJ MRAM cell technology, which enables the same fast access time as and with smaller cell area than as that of 6T SRAMs. We designed a 4Mb macro using the SWST architecture with a 0.15μm CMOS process and a 0.24μm MRAM process. The macro cell array consists of 81T64MTJ cell array elements, each storing 64bits of data. Area size is reduced by 30%, and by introducing a leakage-replication (LR) read scheme, 50ns access time is achieved with SPICE simulation. The 2T1MTJ macro and 81T64MTJ macro can be integrated into a single SoC. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
MRAM / Embedded Memories / SoC / / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 108, no. 6, ICD2008-12, pp. 63-68, April 2008. |
| Paper # |
ICD2008-12 |
| Date of Issue |
2008-04-10 (ICD) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ICD2008-12 |
| Conference Information |
| Committee |
ICD |
| Conference Date |
2008-04-17 - 2008-04-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ICD |
| Conference Code |
2008-04-ICD |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
A 4-Mb MRAM macro comprising shared write-selection transistor cells and using a leakage-replication read scheme |
| Sub Title (in English) |
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| Keyword(1) |
MRAM |
| Keyword(2) |
Embedded Memories |
| Keyword(3) |
SoC |
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| 1st Author's Name |
Ryusuke Nebashi |
| 1st Author's Affiliation |
NEC Corporation (NEC) |
| 2nd Author's Name |
Noboru Sakimura |
| 2nd Author's Affiliation |
NEC Corporation (NEC) |
| 3rd Author's Name |
Tadahiko Sugibayashi |
| 3rd Author's Affiliation |
NEC Corporation (NEC) |
| 4th Author's Name |
Hiroaki Honjo |
| 4th Author's Affiliation |
NEC Corporation (NEC) |
| 5th Author's Name |
Shinsaku Saito |
| 5th Author's Affiliation |
NEC Corporation (NEC) |
| 6th Author's Name |
Yuko Kato |
| 6th Author's Affiliation |
NEC Corporation (NEC) |
| 7th Author's Name |
Naoki Kasai |
| 7th Author's Affiliation |
NEC Corporation (NEC) |
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| Speaker |
Author-1 |
| Date Time |
2008-04-18 13:55:00 |
| Presentation Time |
25 minutes |
| Registration for |
ICD |
| Paper # |
ICD2008-12 |
| Volume (vol) |
vol.108 |
| Number (no) |
no.6 |
| Page |
pp.63-68 |
| #Pages |
6 |
| Date of Issue |
2008-04-10 (ICD) |