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Paper Abstract and Keywords
Presentation 2008-04-18 15:20
[Invited Talk] Electrode Material Dependence on Binary Oxide RRAM Characteristics
Yukio Tamai (Sharp), Hisashi Shima, Hiroyuki Akinaga (AIST), Yasunari Hosoi, Shigeo Ohnishi, Nobuyoshi Awaya (Sharp) ICD2008-15
Abstract (in Japanese) (See Japanese page) 
(in English) We have synthesized Ta/Co-O/Pt RRRAM and 20ns high-speed switching and low writing current around 100$\mu$A with excellent endurance reliability was demonstrated. The electrode materials which are easily oxidized at the electrode/oxide interface and the interface oxides have a high resistivity lower the erasing current significantly by current regulation during forming.
Keyword (in Japanese) (See Japanese page) 
(in English) RRAM / Nonvolatile Memory / High Speed / Low Writing Current / Binary Oxide / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 6, ICD2008-15, pp. 79-82, April 2008.
Paper # ICD2008-15 
Date of Issue 2008-04-10 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2008-04-17 - 2008-04-18 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2008-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrode Material Dependence on Binary Oxide RRAM Characteristics 
Sub Title (in English)  
Keyword(1) RRAM  
Keyword(2) Nonvolatile Memory  
Keyword(3) High Speed  
Keyword(4) Low Writing Current  
Keyword(5) Binary Oxide  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yukio Tamai  
1st Author's Affiliation Sharp Corporation (Sharp)
2nd Author's Name Hisashi Shima  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Hiroyuki Akinaga  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Yasunari Hosoi  
4th Author's Affiliation Sharp Corporation (Sharp)
5th Author's Name Shigeo Ohnishi  
5th Author's Affiliation Sharp Corporation (Sharp)
6th Author's Name Nobuyoshi Awaya  
6th Author's Affiliation Sharp Corporation (Sharp)
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Speaker Author-1 
Date Time 2008-04-18 15:20:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2008-15 
Volume (vol) vol.108 
Number (no) no.6 
Page pp.79-82 
#Pages 4 
Date of Issue 2008-04-10 (ICD) 

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