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Paper Abstract and Keywords
Presentation 2008-04-22 14:50
GaN HEMT broadband high efficiency amplifier
Koji Yamanaka, Hiroshi Otsuka, Yoshinori Tsuyama, Shin Chaki, Akira Inoue (Mitsubishi Electric Corp.) SCE2008-10 MW2008-10
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, circuit technologies for GaN HEMT broadband high efficiency amplifiers are presented. Cat-CVD technique eliminated so-called current-slump phenomenon and highest power added efficiency of 62 % was obtained for a 1 cell transistor at C-band with operating drain voltage of 40V by using harmonic load pull / source pull measurements. 3 kinds of circuit topologies were experimentally investigated for broadband high efficiency operation. Each of them successfully achieved more than 50% PAE with 40~100W output power at C-band over more than 5% relative band width.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / High-voltage techniques / MODFET power amplifiers / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 13, MW2008-10, pp. 53-58, April 2008.
Paper # MW2008-10 
Date of Issue 2008-04-15 (SCE, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SCE2008-10 MW2008-10

Conference Information
Committee SCE MW  
Conference Date 2008-04-22 - 2008-04-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave, Superconductivity 
Paper Information
Registration To MW 
Conference Code 2008-04-SCE-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN HEMT broadband high efficiency amplifier 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) High-voltage techniques  
Keyword(3) MODFET power amplifiers  
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1st Author's Name Koji Yamanaka  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
2nd Author's Name Hiroshi Otsuka  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
3rd Author's Name Yoshinori Tsuyama  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
4th Author's Name Shin Chaki  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
5th Author's Name Akira Inoue  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric Corp.)
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Speaker Author-1 
Date Time 2008-04-22 14:50:00 
Presentation Time 20 minutes 
Registration for MW 
Paper # SCE2008-10, MW2008-10 
Volume (vol) vol.108 
Number (no) no.12(SCE), no.13(MW) 
Page pp.53-58 
#Pages 6 
Date of Issue 2008-04-15 (SCE, MW) 

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