Paper Abstract and Keywords |
Presentation |
2008-06-13 14:40
Reliability evaluation of MOCVD-grown InP/InGaAs HBTs Keita Ogisu, Yoshihiro Fukushima, Kenji Shiojima (Fukui Univ.), Gkou Araki, Hideo Yokohama (NTT-AT) ED2008-26 Link to ES Tech. Rep. Archives: ED2008-26 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We examined to reduce hydrogen atom concentration in a p-type InGaAs base layer by using ethyl based precursors (TMI,TMGa,TMAs)in MOCVD-grown carbon-doped InP/InGaAs HBT structure. Good I-V characteristics were confirmed and reliability evaluation was conducted. After a large collector current, which is 98% of maximum collector current, was applied for 40 hours, β reduced 23%. Combining with another reliability test with the opposite bias polarity between emitter and collector electrodes, forward biased p-n junctions were degraded. After the degradation, by applying reverse bias to the junction, the β reduction recovered to 14%. Migration of hydrogen atoms would be responsible for this reversible variation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
C-doped InP/InGaAs HBT / MOCVD-growth / Ethyl base precursor / Reliability / passivation / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 87, ED2008-26, pp. 23-28, June 2008. |
Paper # |
ED2008-26 |
Date of Issue |
2008-06-06 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-26 Link to ES Tech. Rep. Archives: ED2008-26 |
Conference Information |
Committee |
ED |
Conference Date |
2008-06-13 - 2008-06-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kanazawa University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process and device technology od semiconductors (surface, interface, reliability, etc.) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Reliability evaluation of MOCVD-grown InP/InGaAs HBTs |
Sub Title (in English) |
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Keyword(1) |
C-doped InP/InGaAs HBT |
Keyword(2) |
MOCVD-growth |
Keyword(3) |
Ethyl base precursor |
Keyword(4) |
Reliability |
Keyword(5) |
passivation |
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1st Author's Name |
Keita Ogisu |
1st Author's Affiliation |
Fukui University (Fukui Univ.) |
2nd Author's Name |
Yoshihiro Fukushima |
2nd Author's Affiliation |
Fukui University (Fukui Univ.) |
3rd Author's Name |
Kenji Shiojima |
3rd Author's Affiliation |
Fukui University (Fukui Univ.) |
4th Author's Name |
Gkou Araki |
4th Author's Affiliation |
NTT Advanced Technology (NTT-AT) |
5th Author's Name |
Hideo Yokohama |
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NTT Advanced Technology (NTT-AT) |
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Speaker |
Author-1 |
Date Time |
2008-06-13 14:40:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-26 |
Volume (vol) |
vol.108 |
Number (no) |
no.87 |
Page |
pp.23-28 |
#Pages |
6 |
Date of Issue |
2008-06-06 (ED) |
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