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Paper Abstract and Keywords
Presentation 2008-06-14 09:25
Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes
Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU) ED2008-33
Abstract (in Japanese) (See Japanese page) 
(in English) For compound semiconductor triple-barrier resonant tunneling diodes (TBRTDs), nonlinear equivalent circuits and voltage dependence of circuit elements were experimentally evaluated. We measured S-parameters of GaInAs/AlInAs TBRTDs up to 40 GHz and deembedded the circuit parameters. Quantum inductance and quantum capacitance are found to be related to the nonlinear negative differential conductance of the TBRTDs.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs/AlInAs / Triple-barrier Resonant Tunneling diodes / Differential Conductance / Nonlinear Equivalent Circuit / Quantum Capacitance / Quantum Inductance / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 87, ED2008-33, pp. 61-66, June 2008.
Paper # ED2008-33 
Date of Issue 2008-06-06 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-33

Conference Information
Committee ED  
Conference Date 2008-06-13 - 2008-06-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2008-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes 
Sub Title (in English)  
Keyword(1) InGaAs/AlInAs  
Keyword(2) Triple-barrier Resonant Tunneling diodes  
Keyword(3) Differential Conductance  
Keyword(4) Nonlinear Equivalent Circuit  
Keyword(5) Quantum Capacitance  
Keyword(6) Quantum Inductance  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuichi Iki  
1st Author's Affiliation Tokyo Metropolitan University (TMU)
2nd Author's Name Masaaki Shinada  
2nd Author's Affiliation Tokyo Metropolitan University (TMU)
3rd Author's Name Mamoru Naoi  
3rd Author's Affiliation Tokyo Metropolitan University (TMU)
4th Author's Name Naoya Asaoka  
4th Author's Affiliation Tokyo Metropolitan University (TMU)
5th Author's Name Michihiko Suhara  
5th Author's Affiliation Tokyo Metropolitan University (TMU)
6th Author's Name Tsugunori Okumura  
6th Author's Affiliation Tokyo Metropolitan University (TMU)
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Speaker Author-1 
Date Time 2008-06-14 09:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-33 
Volume (vol) vol.108 
Number (no) no.87 
Page pp.61-66 
#Pages 6 
Date of Issue 2008-06-06 (ED) 

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