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Paper Abstract and Keywords
Presentation 2008-06-14 09:50
Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals) ED2008-34
Abstract (in Japanese) (See Japanese page) 
(in English) Fluidic Self-Assembly (FSA) is an innovative technique for heterogeneous integration. This technique enables us to assemble small device blocks, the size of which is in a range of 10 $\mu$m to 1 mm, on a various substrate. In this paper, we discuss the fabrication process for the device blocks made of InGaAs/InAlAs material system for the FSA, which is suitable for ultrahigh speed applications. We first tried to use InP substrate itself for sacrificial layer to fabricate InAlAs blocks. It was found, however, anomalous etching occurs in the InAlAs blcok layer, and it makes difficult to fabricate blocks. Then we investigated new process using mechanical polishing and etching from the backside of the substrate. With this process good device blocks containing resonant tunneling diodes were fabricated. Some circuits were also demonstrated with these device blocks.
Keyword (in Japanese) (See Japanese page) 
(in English) heterogeneous integration / resonant tunneling / InP / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 87, ED2008-34, pp. 67-72, June 2008.
Paper # ED2008-34 
Date of Issue 2008-06-06 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2008-06-13 - 2008-06-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2008-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of Resonant Tunneling Devic Blocks for Fluidic Self-Assembly 
Sub Title (in English)  
Keyword(1) heterogeneous integration  
Keyword(2) resonant tunneling  
Keyword(3) InP  
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1st Author's Name Koichi Maezawa  
1st Author's Affiliation University of Toyama (Univ. Toyama)
2nd Author's Name Naoki Kamegai  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Shigeru Kishimoto  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Takashi Mizutani  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Kazuhiro Akamatsu  
5th Author's Affiliation Nippon Mining & Metals Co.,Ltd. (Nippon Mining & Metals)
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Speaker Author-1 
Date Time 2008-06-14 09:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-34 
Volume (vol) vol.108 
Number (no) no.87 
Page pp.67-72 
#Pages 6 
Date of Issue 2008-06-06 (ED) 

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