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Paper Abstract and Keywords
Presentation 2008-06-27 16:20
Analysis of pentacene FET with ferroelectric gate insulator: effect of Source and Drain electrodes
Shuhei Yoshita, Ryosuke Tamura, Eunju Lim, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) EMD2008-20 CPM2008-39 OME2008-41
Abstract (in Japanese) (See Japanese page) 
(in English) Using pentacene field effect transistors with ferroelectric gate insulator, we studied the charge accumulation at the FET channel in terms of carrier injection and turn over of spontaneous polarization of the gate insulator. The difference of work-function of metal electrodes (Au,Al) leads to the difference in a voltage that generates the turn over of the spontaneous polarization. In the case of Al electrodes, the voltage of the turn over depends on the sweep speed of the gate voltage. This result suggests that the accumulation of holes from Al electrodes is restricted owing to the high injection barrier height.
Keyword (in Japanese) (See Japanese page) 
(in English) organic field effect transistor / OFET / pentacene / injection barrier / turning over of spontaneous polarization / P(VDF-TeFE) / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 112, OME2008-41, pp. 53-57, June 2008.
Paper # OME2008-41 
Date of Issue 2008-06-20 (EMD, CPM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMD2008-20 CPM2008-39 OME2008-41

Conference Information
Committee EMD CPM OME  
Conference Date 2008-06-27 - 2008-06-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OME 
Conference Code 2008-06-EMD-CPM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of pentacene FET with ferroelectric gate insulator: effect of Source and Drain electrodes 
Sub Title (in English)  
Keyword(1) organic field effect transistor  
Keyword(2) OFET  
Keyword(3) pentacene  
Keyword(4) injection barrier  
Keyword(5) turning over of spontaneous polarization  
Keyword(6) P(VDF-TeFE)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shuhei Yoshita  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Ryosuke Tamura  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Eunju Lim  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Takaaki Manaka  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name Mitsumasa Iwamoto  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2008-06-27 16:20:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # EMD2008-20, CPM2008-39, OME2008-41 
Volume (vol) vol.108 
Number (no) no.110(EMD), no.111(CPM), no.112(OME) 
Page pp.53-57 
#Pages 5 
Date of Issue 2008-06-20 (EMD, CPM, OME) 

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