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Paper Abstract and Keywords
Presentation 2008-06-27 11:25
Heterojunction Phototransistor with High Responsivity at 2.3 μm wavelength
Hideki Fukano, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo (NTT) OPE2008-22 LQE2008-23
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a novel mid-infrared photodetector that provides high responsivity and a low dark current. The device consists of a heterojunction phototransistor (HPT) with a strained InAs/InGaAs multiquantum-well (MQW) absorption layer inserted in the low electric field region of the collector. The basic layer structure was formed using the mature InGaAsP material system, which is employed in optical telecommunications devices. The strained InAs well under a low electric field enhances the quantum-confined effect. This provides a high absorption coefficient at a wavelength of 2.3 μm. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10 A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current even at room temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) Phototransistor / high responsivity / multi-quantum-well / InAs/InGaAs / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 114, LQE2008-23, pp. 21-24, June 2008.
Paper # LQE2008-23 
Date of Issue 2008-06-20 (OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2008-22 LQE2008-23

Conference Information
Committee OPE LQE  
Conference Date 2008-06-27 - 2008-06-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2008-06-OPE-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Heterojunction Phototransistor with High Responsivity at 2.3 μm wavelength 
Sub Title (in English)  
Keyword(1) Phototransistor  
Keyword(2) high responsivity  
Keyword(3) multi-quantum-well  
Keyword(4) InAs/InGaAs  
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1st Author's Name Hideki Fukano  
1st Author's Affiliation Nippon Telegraph and Telephone Photonics Laboratories (NTT)
2nd Author's Name Tomonari Sato  
2nd Author's Affiliation Nippon Telegraph and Telephone Photonics Laboratories (NTT)
3rd Author's Name Manabu Mitsuhara  
3rd Author's Affiliation Nippon Telegraph and Telephone Photonics Laboratories (NTT)
4th Author's Name Yasuhiro Kondo  
4th Author's Affiliation Nippon Telegraph and Telephone Photonics Laboratories (NTT)
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Speaker Author-1 
Date Time 2008-06-27 11:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OPE2008-22, LQE2008-23 
Volume (vol) vol.108 
Number (no) no.113(OPE), no.114(LQE) 
Page pp.21-24 
#Pages 4 
Date of Issue 2008-06-20 (OPE, LQE) 

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