講演抄録/キーワード |
講演名 |
2008-07-09 17:35
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation ○Sang Hyuk Park・Sangwoo Kang・Dong-Seup Lee・Jung Han Lee・Hong-Seon Yang・Kwon-Chil Kang・Joung-Eob Lee・Jong Duk Lee・Byung-Gook Park(Seoul National Univ.) ED2008-53 SDM2008-72 エレソ技報アーカイブへのリンク:ED2008-53 SDM2008-72 |
抄録 |
(和) |
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. And not only control gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation. |
(英) |
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. And not only control gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation. |
キーワード |
(和) |
Single Electron Transistor / recessed channel / MOSFET current / / / / / |
(英) |
Single Electron Transistor / recessed channel / MOSFET current / / / / / |
文献情報 |
信学技報, vol. 108, no. 122, SDM2008-72, pp. 73-76, 2008年7月. |
資料番号 |
SDM2008-72 |
発行日 |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2008-53 SDM2008-72 エレソ技報アーカイブへのリンク:ED2008-53 SDM2008-72 |