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| Presentation | 2008-07-10 09:00 Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.)  ED2008-54 SDM2008-73 Link to ES Tech. Rep. Archives: ED2008-54 SDM2008-73 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at room temperature, in which parameters such as the gas pressure and input power to generate H2 plasma and the Pd film thickness were selected to get some insights into surface migration of Pd atoms induced with atomic hydrogen irradiation and resultant agglomeration with cohesive action. The areal dot density was controlled in the range from ~3.4 to ~6.5x1011cm-2 while the dot size distribution was changed from ~7 to ~1.5 in average dot height with ~40% variation in full-width at half maximum. We also fabricated MOS capacitors with a Pd-nanodots floating gate and confirmed the flat-band voltage shift in capacitance-voltage characteristic due to electron injection to and emission from the dots floating gate. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Pd Nanodot / Remote Hydrogen Plasma / Floating Gate MOS memory / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 122, SDM2008-73, pp. 77-80, July 2008. | |
| Paper # | SDM2008-73 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-54 SDM2008-73 Link to ES Tech. Rep. Archives: ED2008-54 SDM2008-73 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-SDM-ED |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories |
| Sub Title (in English) | |
| Keyword(1) | Pd Nanodot |
| Keyword(2) | Remote Hydrogen Plasma |
| Keyword(3) | Floating Gate MOS memory |
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| 1st Author's Name | Kazuhiro Shimanoe |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Katsunori Makihara |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Mitsuhisa Ikeda |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Seiichi Miyazaki |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-10 09:00:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2008-54, SDM2008-73 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.77-80 |
| #Pages | 4 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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