| 講演抄録/キーワード |
| 講演名 |
2008-07-10 09:30
3-dimensional Terraced NAND(3D TNAND) Flash Memory ○Yoon Kim・Gil-Seong Lee・Jong Duk Lee・Hyungcheol Shin・Byung-Gook Park(Seoul National Univ.) ED2008-56 SDM2008-75 |
| 抄録 |
(和) |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enough long channel in 1F2 size. And it has 3-dimensional novel structure whose channel is connected vertically along with two stairs. So we can obtain high integration like stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its process method is proposed. |
| (英) |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enough long channel in 1F2 size. And it has 3-dimensional novel structure whose channel is connected vertically along with two stairs. So we can obtain high integration like stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its process method is proposed. |
| キーワード |
(和) |
NAND / flash memory / stacked NAND / vertical channel / / / / |
| (英) |
NAND / flash memory / stacked NAND / vertical channel / / / / |
| 文献情報 |
信学技報, vol. 108, no. 122, SDM2008-75, pp. 85-88, 2008年7月. |
| 資料番号 |
SDM2008-75 |
| 発行日 |
2008-07-02 (ED, SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| PDFダウンロード |
ED2008-56 SDM2008-75 |
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