Paper Abstract and Keywords |
Presentation |
2008-07-10 09:30
3-dimensional Terraced NAND(3D TNAND) Flash Memory Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75 Link to ES Tech. Rep. Archives: ED2008-56 SDM2008-75 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enough long channel in 1F2 size. And it has 3-dimensional novel structure whose channel is connected vertically along with two stairs. So we can obtain high integration like stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its process method is proposed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
NAND / flash memory / stacked NAND / vertical channel / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-75, pp. 85-88, July 2008. |
Paper # |
SDM2008-75 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-56 SDM2008-75 Link to ES Tech. Rep. Archives: ED2008-56 SDM2008-75 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
3-dimensional Terraced NAND(3D TNAND) Flash Memory |
Sub Title (in English) |
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Keyword(1) |
NAND |
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flash memory |
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stacked NAND |
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vertical channel |
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1st Author's Name |
Yoon Kim |
1st Author's Affiliation |
Seoul National University (Seoul National Univ.) |
2nd Author's Name |
Gil-Seong Lee |
2nd Author's Affiliation |
Seoul National University (Seoul National Univ.) |
3rd Author's Name |
Jong Duk Lee |
3rd Author's Affiliation |
Seoul National University (Seoul National Univ.) |
4th Author's Name |
Hyungcheol Shin |
4th Author's Affiliation |
Seoul National University (Seoul National Univ.) |
5th Author's Name |
Byung-Gook Park |
5th Author's Affiliation |
Seoul National University (Seoul National Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-07-10 09:30:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2008-56, SDM2008-75 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.85-88 |
#Pages |
4 |
Date of Issue |
2008-07-02 (ED, SDM) |
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