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| 講演名 | 2008-07-10 11:10 Current Transport Characteristics for Organic Nonvolatile Memories ○Woo-Sik Nam・Gon-Sub Lee・Sung-Ho Seo・Young-Hwan Oh・Jae-Gun Park（Hanyang Univ.）  ED2008-61 SDM2008-80 |
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| 抄録 | （和） | Recently, organic nonvolatile memory has attracted much interest as a candidate device for next generation nonvolatile memory because of its simple process, small device area, and high speed. So, next generation nonvolatile memory is studied actively in many industrial and academic labs. However, results of many research groups announce differed, and anyone did not reveal correct current transport mechanism. We confirmed following results through continuous research. An organic memory cell fabricated with embedded metal nanocrystals in a layer of small molecules or a polymer layer could only show nonvolatile memory behavior of the organic memory type with I-V characteristic of negative differential resistance and a current path of the high-resistance, low-resistance, high-resistance, and high-resistance states when the applied bias was swept from program and erase at a positive voltage followed by program and erase at a negative voltage. On the other hand, organic devices fabricated without embedded metal nanocrystals could show only resistance behavior or nonvolatile memory behavior based on resistive random-access-memory with a current path of the low-resistance, high-resistance, high-resistance, and low-resistance states when the applied bias was swept as above. Moreover, as analyzing I-V characteristics of organic memory cells in relation to current conduction mechanism and temperature dependency of current, we aimed to find out current transport mechanism that contribute to show actually nonvolatile memory characteristics of organic memory cells. |
| （英） | Recently, organic nonvolatile memory has attracted much interest as a candidate device for next generation nonvolatile memory because of its simple process, small device area, and high speed. So, next generation nonvolatile memory is studied actively in many industrial and academic labs. However, results of many research groups announce differed, and anyone did not reveal correct current transport mechanism. We confirmed following results through continuous research. An organic memory cell fabricated with embedded metal nanocrystals in a layer of small molecules or a polymer layer could only show nonvolatile memory behavior of the organic memory type with I-V characteristic of negative differential resistance and a current path of the high-resistance, low-resistance, high-resistance, and high-resistance states when the applied bias was swept from program and erase at a positive voltage followed by program and erase at a negative voltage. On the other hand, organic devices fabricated without embedded metal nanocrystals could show only resistance behavior or nonvolatile memory behavior based on resistive random-access-memory with a current path of the low-resistance, high-resistance, high-resistance, and low-resistance states when the applied bias was swept as above. Moreover, as analyzing I-V characteristics of organic memory cells in relation to current conduction mechanism and temperature dependency of current, we aimed to find out current transport mechanism that contribute to show actually nonvolatile memory characteristics of organic memory cells. | |
| キーワード | （和） | conductive organic / current transport mechanism / Al nanocrystals / / / / / |
| （英） | conductive organic / current transport mechanism / Al nanocrystals / / / / / | |
| 文献情報 | 信学技報, vol. 108, no. 122, SDM2008-80, pp. 113-117, 2008年7月. | |
| 資料番号 | SDM2008-80 | |
| 発行日 | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| 著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します．(許諾番号：10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| PDFダウンロード | ED2008-61 SDM2008-80 |
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| 研究会情報 | |
| 研究会 | SDM ED |
| 開催期間 | 2008-07-09 - 2008-07-11 |
| 開催地（和） | かでる２・７（札幌） |
| 開催地（英） | Kaderu２・７ |
| テーマ（和） | 第16回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2008) |
| テーマ（英） | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| 講演論文情報の詳細 | |
| 申込み研究会 | SDM |
| 会議コード | 2008-07-SDM-ED |
| 本文の言語 | 英語 |
| タイトル（和） | |
| サブタイトル（和） | |
| タイトル（英） | Current Transport Characteristics for Organic Nonvolatile Memories |
| サブタイトル（英） | |
| キーワード(1)（和/英） | conductive organic / conductive organic |
| キーワード(2)（和/英） | current transport mechanism / current transport mechanism |
| キーワード(3)（和/英） | Al nanocrystals / Al nanocrystals |
| キーワード(4)（和/英） | / |
| キーワード(5)（和/英） | / |
| キーワード(6)（和/英） | / |
| キーワード(7)（和/英） | / |
| キーワード(8)（和/英） | / |
| 第1著者 氏名（和/英/ヨミ） | Woo-Sik Nam / Woo-Sik Nam / |
| 第1著者 所属（和/英） | Hanyang University (略称： Hanyang Univ.) Hanyang University (略称： Hanyang Univ.) |
| 第2著者 氏名（和/英/ヨミ） | Gon-Sub Lee / Gon-Sub Lee / |
| 第2著者 所属（和/英） | Hanyang University (略称： Hanyang Univ.) Hanyang University (略称： Hanyang Univ.) |
| 第3著者 氏名（和/英/ヨミ） | Sung-Ho Seo / Sung-Ho Seo / |
| 第3著者 所属（和/英） | Hanyang University (略称： Hanyang Univ.) Hanyang University (略称： Hanyang Univ.) |
| 第4著者 氏名（和/英/ヨミ） | Young-Hwan Oh / Young-Hwan Oh / |
| 第4著者 所属（和/英） | Hanyang University (略称： Hanyang Univ.) Hanyang University (略称： Hanyang Univ.) |
| 第5著者 氏名（和/英/ヨミ） | Jae-Gun Park / Jae-Gun Park / |
| 第5著者 所属（和/英） | Hanyang University (略称： Hanyang Univ.) Hanyang University (略称： Hanyang Univ.) |
| 講演者 | 第1著者 |
| 発表日時 | 2008-07-10 11:10:00 |
| 発表時間 | 15分 |
| 申込先研究会 | SDM |
| 資料番号 | ED2008-61, SDM2008-80 |
| 巻番号（vol） | vol.108 |
| 号番号（no） | no.121(ED), no.122(SDM) |
| ページ範囲 | pp.113-117 |
| ページ数 | 5 |
| 発行日 | 2008-07-02 (ED, SDM) |
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