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Paper Abstract and Keywords
Presentation 2008-07-10 11:10
Current Transport Characteristics for Organic Nonvolatile Memories
Woo-Sik Nam, Gon-Sub Lee, Sung-Ho Seo, Young-Hwan Oh, Jae-Gun Park (Hanyang Univ.) ED2008-61 SDM2008-80 Link to ES Tech. Rep. Archives: ED2008-61 SDM2008-80
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, organic nonvolatile memory has attracted much interest as a candidate device for next generation nonvolatile memory because of its simple process, small device area, and high speed. So, next generation nonvolatile memory is studied actively in many industrial and academic labs. However, results of many research groups announce differed, and anyone did not reveal correct current transport mechanism. We confirmed following results through continuous research. An organic memory cell fabricated with embedded metal nanocrystals in a layer of small molecules or a polymer layer could only show nonvolatile memory behavior of the organic memory type with I-V characteristic of negative differential resistance and a current path of the high-resistance, low-resistance, high-resistance, and high-resistance states when the applied bias was swept from program and erase at a positive voltage followed by program and erase at a negative voltage. On the other hand, organic devices fabricated without embedded metal nanocrystals could show only resistance behavior or nonvolatile memory behavior based on resistive random-access-memory with a current path of the low-resistance, high-resistance, high-resistance, and low-resistance states when the applied bias was swept as above. Moreover, as analyzing I-V characteristics of organic memory cells in relation to current conduction mechanism and temperature dependency of current, we aimed to find out current transport mechanism that contribute to show actually nonvolatile memory characteristics of organic memory cells.
Keyword (in Japanese) (See Japanese page) 
(in English) conductive organic / current transport mechanism / Al nanocrystals / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-80, pp. 113-117, July 2008.
Paper # SDM2008-80 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-61 SDM2008-80 Link to ES Tech. Rep. Archives: ED2008-61 SDM2008-80

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Current Transport Characteristics for Organic Nonvolatile Memories 
Sub Title (in English)  
Keyword(1) conductive organic  
Keyword(2) current transport mechanism  
Keyword(3) Al nanocrystals  
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1st Author's Name Woo-Sik Nam  
1st Author's Affiliation Hanyang University (Hanyang Univ.)
2nd Author's Name Gon-Sub Lee  
2nd Author's Affiliation Hanyang University (Hanyang Univ.)
3rd Author's Name Sung-Ho Seo  
3rd Author's Affiliation Hanyang University (Hanyang Univ.)
4th Author's Name Young-Hwan Oh  
4th Author's Affiliation Hanyang University (Hanyang Univ.)
5th Author's Name Jae-Gun Park  
5th Author's Affiliation Hanyang University (Hanyang Univ.)
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Speaker Author-1 
Date Time 2008-07-10 11:10:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-61, SDM2008-80 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.113-117 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


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