Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-07-10 10:55
Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism
Yuto Norifusa, Tetsuo Endoh (Tohoku Univ.) ED2008-60 SDM2008-79
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, the device performances of sub-10nm Vertical MOSFETs are investigated. One of the drawbacks of conventional planar MOSFETs is that in the sub-10nm generation, its cutoff leakage current increases due to the short channel effects, but even more, its driving current decreases due to the quantum mechanical confinement effects such as the sub-band effect and the depletion of the inversion layer. It is shown for the first time that by downscaling the silicon pillar diameter from 20nm to 4nm, the Vertical MOSFET increases its driving current per footprint to about 2 times and suppresses its total cutoff leakage current per footprint to less than 1/60 at the same time. Moreover, the mechanisms of these improvements of Vertical MOSFET performances are clarified. The results of this work show that Vertical MOSFETs can overcome the drawbacks of conventional planar MOSFETs and achieve the high device performance through the sub-10nm generation.
Keyword (in Japanese) (See Japanese page) 
(in English) Vertical MOSFET / sub-10nm / driving current / cutoff leakage current / current density / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-79, pp. 107-111, July 2008.
Paper # SDM2008-79 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-60 SDM2008-79

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu２・７ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Scalability of Vertical MOSFETs in Sub-10nm generation and its Mechanism 
Sub Title (in English)  
Keyword(1) Vertical MOSFET  
Keyword(2) sub-10nm  
Keyword(3) driving current  
Keyword(4) cutoff leakage current  
Keyword(5) current density  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuto Norifusa  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tetsuo Endoh  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-07-10 10:55:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-60, SDM2008-79 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.107-111 
#Pages 5 
Date of Issue 2008-07-02 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan