IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-07-10 09:15
Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories
Doo-Hyun Kim, Il Han Park, Byung-Gook Park (Seoul National Univ.) ED2008-55 SDM2008-74 Link to ES Tech. Rep. Archives: ED2008-55 SDM2008-74
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a detailed study of the retention characteristics in scaled multi-bit SONOS flash memories. By calculating the oxide field and tunneling currents, we evaluate the charge trapping mechanism. We calculate transient retention dynamics with the ONO fields, trapped charge, and tunneling currents. All the parameters were obtained by physics-based equations and without any fitting parameters or optimization steps. The results can be used with nanoscale nonvolatile memory. This modeling accounts for the VT shift as a function of trapped charge, time, and thickness of silicon oxide and silicon nitride layers, and can be used for optimizing the ONO geometry and parameters for maximum performance.
Keyword (in Japanese) (See Japanese page) 
(in English) SONOS / flash memory / retention / double-gate / multi-bit / nitride-based charge trap memory / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-74, pp. 81-84, July 2008.
Paper # SDM2008-74 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-55 SDM2008-74 Link to ES Tech. Rep. Archives: ED2008-55 SDM2008-74

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Simulation of Retention Characteristics in Double-Gate Structure Multi-bit SONOS Flash Memories 
Sub Title (in English)  
Keyword(1) SONOS  
Keyword(2) flash memory  
Keyword(3) retention  
Keyword(4) double-gate  
Keyword(5) multi-bit  
Keyword(6) nitride-based charge trap memory  
Keyword(7)  
Keyword(8)  
1st Author's Name Doo-Hyun Kim  
1st Author's Affiliation Seoul National University (Seoul National Univ.)
2nd Author's Name Il Han Park  
2nd Author's Affiliation Seoul National University (Seoul National Univ.)
3rd Author's Name Byung-Gook Park  
3rd Author's Affiliation Seoul National University (Seoul National Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2008-07-10 09:15:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-55, SDM2008-74 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.81-84 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan