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Paper Abstract and Keywords
Presentation 2008-07-11 14:05
Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes
M. R. Kim, S. D. Lee, J. S. Lee, N. S. Kwak, S. D. Kim, J. K. Rhee (Dongguk Univ.), W. J. Kim (ADD) ED2008-100 SDM2008-119
Abstract (in Japanese) (See Japanese page) 
(in English) We examined the heat dissipation and the nature of the negative-differential-resistance for GaAs Gunn diodes in a vertical device structure and a planar structure. In the vertical structure we designed and fabricated the Gunn diodes taking into consideration the effective heat dissipation through integral heat sink and sufficient wafer thinning for the standard Gunn diode packaging. Size of circular anode varies from 42−70 ・ in diameter. In the standard integral heat sink technique, the substrate was thinned to a thickness of 10−13 ・ after forming the heat sink. In the planar structure, the anode was situated inside the cathode for modular packaging of the flip-chip bonding. We compared the results for the negative-differential-resistance in the planar structure with the vertical one and discussed the heat dissipation.
Keyword (in Japanese) (See Japanese page) 
(in English) GaAs Gunn Diode / Negative-Differential-Resistance / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-119, pp. 317-320, July 2008.
Paper # SDM2008-119 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-100 SDM2008-119

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu２・７ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes 
Sub Title (in English)  
Keyword(1) GaAs Gunn Diode  
Keyword(2) Negative-Differential-Resistance  
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1st Author's Name M. R. Kim  
1st Author's Affiliation Dongguk University (Dongguk Univ.)
2nd Author's Name S. D. Lee  
2nd Author's Affiliation Dongguk University (Dongguk Univ.)
3rd Author's Name J. S. Lee  
3rd Author's Affiliation Dongguk University (Dongguk Univ.)
4th Author's Name N. S. Kwak  
4th Author's Affiliation Dongguk University (Dongguk Univ.)
5th Author's Name S. D. Kim  
5th Author's Affiliation Dongguk University (Dongguk Univ.)
6th Author's Name J. K. Rhee  
6th Author's Affiliation Dongguk University (Dongguk Univ.)
7th Author's Name W. J. Kim  
7th Author's Affiliation Agency for Defense Deevelopment (ADD)
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Speaker Author-1 
Date Time 2008-07-11 14:05:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-100, SDM2008-119 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.317-320 
#Pages 4 
Date of Issue 2008-07-02 (ED, SDM) 

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