講演抄録/キーワード |
講演名 |
2008-07-11 11:35
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology ○Jae-Young Park・Jong-Kyu Song・Chang-Soo Jang・Joon-Tae Jang・San-Hong Kim・Sung-Ki Kim・Taek-Soo Kim(Dongbu HiTek) ED2008-76 SDM2008-95 エレソ技報アーカイブへのリンク:ED2008-76 SDM2008-95 |
抄録 |
(和) |
The holding voltage of the high-voltage devices the snapback breakdown condition has been known to be much smaller than the power supply voltage. Such characteristics cause the high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used in the power-rail ESD clamp circuit. A new latchup-free design of the power-rail ESD clamp circuit with stacked-bipolar devices is proposed and successfully verified in a 0.35・ BCD (Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the power supply voltage. |
(英) |
The holding voltage of the high-voltage devices the snapback breakdown condition has been known to be much smaller than the power supply voltage. Such characteristics cause the high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used in the power-rail ESD clamp circuit. A new latchup-free design of the power-rail ESD clamp circuit with stacked-bipolar devices is proposed and successfully verified in a 0.35・ BCD (Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the power supply voltage. |
キーワード |
(和) |
ESD (Electrostatic Discharge) / power-rail ESD clamp circuit / transient latch-up / stacked-bipolar devices / / / / |
(英) |
ESD (Electrostatic Discharge) / power-rail ESD clamp circuit / transient latch-up / stacked-bipolar devices / / / / |
文献情報 |
信学技報, vol. 108, no. 122, SDM2008-95, pp. 193-197, 2008年7月. |
資料番号 |
SDM2008-95 |
発行日 |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2008-76 SDM2008-95 エレソ技報アーカイブへのリンク:ED2008-76 SDM2008-95 |