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Paper Abstract and Keywords
Presentation 2008-07-17 10:30
A 45 nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka (Renesas Tech.), Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Katsuji Satomi, Hironori Akamatsu (Matsushita Elec.), Hirofumi Shinohara (Renesas Tech.) SDM2008-131 ICD2008-41 Link to ES Tech. Rep. Archives: SDM2008-131 ICD2008-41
Abstract (in Japanese) (See Japanese page) 
(in English) We develop 512 Kb SRAM module in 45 nm LSTP CMOS technology with the variation tolerant assist circuits against process and temperature. We introduce a passive resistance to the read assist circuit, and adopt the divided VDD line in the memory cell array to the write assist circuit. The SRAM cell areas with 0.245 μm2 and 0.327μm2 are fabricated. From the measurements, we show that, by using our circuitry, the SNM exceeds 120 mV and the write margin is improved by 15% in the worst PVT condition.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / Assist circuit / 45nm CMOS / Variability / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 140, ICD2008-41, pp. 17-22, July 2008.
Paper # ICD2008-41 
Date of Issue 2008-07-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-131 ICD2008-41 Link to ES Tech. Rep. Archives: SDM2008-131 ICD2008-41

Conference Information
Committee ICD SDM  
Conference Date 2008-07-17 - 2008-07-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2008-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 45 nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) Assist circuit  
Keyword(3) 45nm CMOS  
Keyword(4) Variability  
Keyword(5)  
Keyword(6)  
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1st Author's Name Makoto Yabuuchi  
1st Author's Affiliation Renesas Technology Corp. (Renesas Tech.)
2nd Author's Name Koji Nii  
2nd Author's Affiliation Renesas Technology Corp. (Renesas Tech.)
3rd Author's Name Yasumasa Tsukamoto  
3rd Author's Affiliation Renesas Technology Corp. (Renesas Tech.)
4th Author's Name Shigeki Ohbayashi  
4th Author's Affiliation Renesas Technology Corp. (Renesas Tech.)
5th Author's Name Susumu Imaoka  
5th Author's Affiliation Renesas Design Corp. (Renesas Tech.)
6th Author's Name Yoshinobu Yamagami  
6th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matsushita Elec.)
7th Author's Name Satoshi Ishikura  
7th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matsushita Elec.)
8th Author's Name Toshio Terano  
8th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matsushita Elec.)
9th Author's Name Katsuji Satomi  
9th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matsushita Elec.)
10th Author's Name Hironori Akamatsu  
10th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matsushita Elec.)
11th Author's Name Hirofumi Shinohara  
11th Author's Affiliation Renesas Technology Corp. (Renesas Tech.)
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Speaker Author-1 
Date Time 2008-07-17 10:30:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2008-131, ICD2008-41 
Volume (vol) vol.108 
Number (no) no.139(SDM), no.140(ICD) 
Page pp.17-22 
#Pages
Date of Issue 2008-07-10 (SDM, ICD) 


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