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Paper Abstract and Keywords
Presentation 2008-07-17 09:00
Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations
Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38
Abstract (in Japanese) (See Japanese page) 
(in English) Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher interface defect density between Si substrate and oxide but also different nature diffect condtion
(Pb center) compared to (100) surface. Both Pb0 and Pb1 defect exist on (100), on the other hand, only Pb0 defect was obserbed on (110) surface. Based on this differenet nature of interface defect, NBTI on (110) is better than that on (100). On the other hand, 1/f noise on (110) much larger than that on (100). These phenomena can be explained with the physical characteristics difference between Pb0 and Pb1.
Keyword (in Japanese) (See Japanese page) 
(in English) NBTI / 1/f noise / (110) substrate / Pb center / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 139, SDM2008-128, pp. 1-6, July 2008.
Paper # SDM2008-128 
Date of Issue 2008-07-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-128 ICD2008-38

Conference Information
Committee ICD SDM  
Conference Date 2008-07-17 - 2008-07-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2008-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations 
Sub Title (in English)  
Keyword(1) NBTI  
Keyword(2) 1/f noise  
Keyword(3) (110) substrate  
Keyword(4) Pb center  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Motoyuki Sato  
1st Author's Affiliation Semiconductor Leading Edge Technologies Inc. (Selete)
2nd Author's Name Yoshihiro Sugita  
2nd Author's Affiliation Semiconductor Leading Edge Technologies Inc. (Selete)
3rd Author's Name Takayuki Aoyama  
3rd Author's Affiliation Semiconductor Leading Edge Technologies Inc. (Selete)
4th Author's Name Yasuo Nara  
4th Author's Affiliation Semiconductor Leading Edge Technologies Inc. (Selete)
5th Author's Name Yuzuru Ohji  
5th Author's Affiliation Semiconductor Leading Edge Technologies Inc. (Selete)
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Speaker Author-1 
Date Time 2008-07-17 09:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-128, ICD2008-38 
Volume (vol) vol.108 
Number (no) no.139(SDM), no.140(ICD) 
Page pp.1-6 
#Pages 6 
Date of Issue 2008-07-10 (SDM, ICD) 

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