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Paper Abstract and Keywords
Presentation 2008-07-17 09:25
Drain Current Fluctuation in High-k Dielectric p-MOSFETs -- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric --
Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) SDM2008-129 ICD2008-39 Link to ES Tech. Rep. Archives: SDM2008-129 ICD2008-39
Abstract (in Japanese) (See Japanese page) 
(in English) Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-k gate dielectric MOSFET have not been fully studied yet. In this paper, we have studied RTN in high-k MOSFETs in comparison with that in SiO2 p-MOSFETs. It is found for the first time that the reduction of RTN amplitude (DId/Id) by the surface holes is smaller in high-k p-MOSFETs, comparing to the SiO2 p-MOSFETs. It is also found that slower traps in the high-k gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-k gate dielectric.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / RTN / High-k / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 139, SDM2008-129, pp. 7-10, July 2008.
Paper # SDM2008-129 
Date of Issue 2008-07-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-129 ICD2008-39 Link to ES Tech. Rep. Archives: SDM2008-129 ICD2008-39

Conference Information
Committee ICD SDM  
Conference Date 2008-07-17 - 2008-07-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2008-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Drain Current Fluctuation in High-k Dielectric p-MOSFETs 
Sub Title (in English) Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric 
Keyword(1) MOSFET  
Keyword(2) RTN  
Keyword(3) High-k  
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1st Author's Name Shigeki Kobayashi  
1st Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Corporate RDC, Toshiba Corp.)
2nd Author's Name Masumi Saitoh  
2nd Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Corporate RDC, Toshiba Corp.)
3rd Author's Name Ken Uchida  
3rd Author's Affiliation Corporate Research & Development Center, Toshiba Corporation (Corporate RDC, Toshiba Corp.)
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Speaker Author-1 
Date Time 2008-07-17 09:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-129, ICD2008-39 
Volume (vol) vol.108 
Number (no) no.139(SDM), no.140(ICD) 
Page pp.7-10 
#Pages
Date of Issue 2008-07-10 (SDM, ICD) 


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