Paper Abstract and Keywords |
Presentation |
2008-07-17 09:25
Drain Current Fluctuation in High-k Dielectric p-MOSFETs
-- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric -- Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) SDM2008-129 ICD2008-39 Link to ES Tech. Rep. Archives: SDM2008-129 ICD2008-39 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, RTN in high-k gate dielectric MOSFET have not been fully studied yet. In this paper, we have studied RTN in high-k MOSFETs in comparison with that in SiO2 p-MOSFETs. It is found for the first time that the reduction of RTN amplitude (DId/Id) by the surface holes is smaller in high-k p-MOSFETs, comparing to the SiO2 p-MOSFETs. It is also found that slower traps in the high-k gate dielectric more severely degrade Id. It is considered that some key characteristics are understandable in terms of the higher dielectric constant and the smaller barrier height of the high-k gate dielectric. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOSFET / RTN / High-k / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 139, SDM2008-129, pp. 7-10, July 2008. |
Paper # |
SDM2008-129 |
Date of Issue |
2008-07-10 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2008-129 ICD2008-39 Link to ES Tech. Rep. Archives: SDM2008-129 ICD2008-39 |
Conference Information |
Committee |
ICD SDM |
Conference Date |
2008-07-17 - 2008-07-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-ICD-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Drain Current Fluctuation in High-k Dielectric p-MOSFETs |
Sub Title (in English) |
Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric |
Keyword(1) |
MOSFET |
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RTN |
Keyword(3) |
High-k |
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1st Author's Name |
Shigeki Kobayashi |
1st Author's Affiliation |
Corporate Research & Development Center, Toshiba Corporation (Corporate RDC, Toshiba Corp.) |
2nd Author's Name |
Masumi Saitoh |
2nd Author's Affiliation |
Corporate Research & Development Center, Toshiba Corporation (Corporate RDC, Toshiba Corp.) |
3rd Author's Name |
Ken Uchida |
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Corporate Research & Development Center, Toshiba Corporation (Corporate RDC, Toshiba Corp.) |
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Speaker |
Author-1 |
Date Time |
2008-07-17 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-129, ICD2008-39 |
Volume (vol) |
vol.108 |
Number (no) |
no.139(SDM), no.140(ICD) |
Page |
pp.7-10 |
#Pages |
4 |
Date of Issue |
2008-07-10 (SDM, ICD) |
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