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| Presentation | 2008-07-18 15:05 Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.)  SDM2008-147 ICD2008-57 Link to ES Tech. Rep. Archives: SDM2008-147 ICD2008-57 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate / High-K dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaCx composition, fixed charge free TaCx/HfSiON device is successfully fabricated. Also, we have demonstrated that the strain effect in deeply scaled devices can be enhanced by eliminating the fixed charges in HfSiON, for the first time. Utilizing Stress Memorization Technique (SMT) and Stress Liner (SL), Lg=35nm high performance TaCx/HfSiON devices is achieved. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Metal Gate / High-k / TaC / HfSiON / MOSFET / SMT / Stress Liner / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 139, SDM2008-147, pp. 109-114, July 2008. | |
| Paper # | SDM2008-147 | |
| Date of Issue | 2008-07-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-147 ICD2008-57 Link to ES Tech. Rep. Archives: SDM2008-147 ICD2008-57 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2008-07-17 - 2008-07-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL |
| Sub Title (in English) | |
| Keyword(1) | Metal Gate |
| Keyword(2) | High-k |
| Keyword(3) | TaC |
| Keyword(4) | HfSiON |
| Keyword(5) | MOSFET |
| Keyword(6) | SMT |
| Keyword(7) | Stress Liner |
| Keyword(8) | |
| 1st Author's Name | Masakazu Goto |
| 1st Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 2nd Author's Name | Kosuke Tatsumura |
| 2nd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 3rd Author's Name | Shigeru Kawanaka |
| 3rd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 4th Author's Name | Kazuaki Nakajima |
| 4th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 5th Author's Name | Reika Ichihara |
| 5th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 6th Author's Name | Yasuhito Yoshimizu |
| 6th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 7th Author's Name | Hiroyuki Onoda |
| 7th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 8th Author's Name | Koji Nagatomo |
| 8th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 9th Author's Name | Toshiyuki Sasaki |
| 9th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 10th Author's Name | Takashi Fukushima |
| 10th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 11th Author's Name | Akiko Nomachi |
| 11th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 12th Author's Name | Seiji Inumiya |
| 12th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 13th Author's Name | Tomonori Aoyama |
| 13th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 14th Author's Name | Masato Koyama |
| 14th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 15th Author's Name | Yoshiaki Toyoshima |
| 15th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2008-07-18 15:05:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-147, ICD2008-57 |
| Volume (vol) | vol.108 |
| Number (no) | no.139(SDM), no.140(ICD) |
| Page | pp.109-114 |
| #Pages | 6 |
| Date of Issue | 2008-07-10 (SDM, ICD) |
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