Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-08-04 14:15
Electron emission from nanocrystalline silicon based MOS chathodes
Hidetaka Shimawaki, Yo Kida (Hachinohe Inst. Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Katsuhisa Murakami, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2008-112
Abstract (in Japanese) (See Japanese page) 
(in English) Emission characteristics of planar cathodes based on nanocrystalline Si covered with a thin oxide film have been studied. The electron emission occurred at the gate voltage higher than the work function of the Au gate, and the emission efficiency was improved up to 4 % by reducing the thickness of Au electrode. A lot of nanoholes in the thin Au film were observed, suggesting emission included electrons directly emitted from nanocrystalline aligned under nanoholes. The energy distribution of emitted electron is also discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) MOS / tunneling cathode / field emitter / electron emission / nanocrystalline silicon / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 177, ED2008-112, pp. 15-20, Aug. 2008.
Paper # ED2008-112 
Date of Issue 2008-07-28 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-112

Conference Information
Committee ED  
Conference Date 2008-08-04 - 2008-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Sizuoka Univ. Hamamatsu Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2008-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electron emission from nanocrystalline silicon based MOS chathodes 
Sub Title (in English)  
Keyword(1) MOS  
Keyword(2) tunneling cathode  
Keyword(3) field emitter  
Keyword(4) electron emission  
Keyword(5) nanocrystalline silicon  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hidetaka Shimawaki  
1st Author's Affiliation Hachinohe Institute of Technology (Hachinohe Inst. Tech.)
2nd Author's Name Yo Kida  
2nd Author's Affiliation Hachinohe Institute of Technology (Hachinohe Inst. Tech.)
3rd Author's Name Yoichiro Neo  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Hidenori Mimura  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Katsuhisa Murakami  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Fujio Wakaya  
6th Author's Affiliation Osaka University (Osaka Univ.)
7th Author's Name Mikio Takai  
7th Author's Affiliation Osaka University (Osaka Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-08-04 14:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-112 
Volume (vol) vol.108 
Number (no) no.177 
Page pp.15-20 
#Pages 6 
Date of Issue 2008-07-28 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan