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| Presentation | 2008-08-04 14:15 Electron emission from nanocrystalline silicon based MOS chathodes Hidetaka Shimawaki, Yo Kida (Hachinohe Inst. Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Katsuhisa Murakami, Fujio Wakaya, Mikio Takai (Osaka Univ.)  ED2008-112 Link to ES Tech. Rep. Archives: ED2008-112 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Emission characteristics of planar cathodes based on nanocrystalline Si covered with a thin oxide film have been studied. The electron emission occurred at the gate voltage higher than the work function of the Au gate, and the emission efficiency was improved up to 4 % by reducing the thickness of Au electrode. A lot of nanoholes in the thin Au film were observed, suggesting emission included electrons directly emitted from nanocrystalline aligned under nanoholes. The energy distribution of emitted electron is also discussed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOS / tunneling cathode / field emitter / electron emission / nanocrystalline silicon / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 177, ED2008-112, pp. 15-20, Aug. 2008. | |
| Paper # | ED2008-112 | |
| Date of Issue | 2008-07-28 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-112 Link to ES Tech. Rep. Archives: ED2008-112 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2008-08-04 - 2008-08-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Sizuoka Univ. Hamamatsu Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-08-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron emission from nanocrystalline silicon based MOS chathodes |
| Sub Title (in English) | |
| Keyword(1) | MOS |
| Keyword(2) | tunneling cathode |
| Keyword(3) | field emitter |
| Keyword(4) | electron emission |
| Keyword(5) | nanocrystalline silicon |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hidetaka Shimawaki |
| 1st Author's Affiliation | Hachinohe Institute of Technology (Hachinohe Inst. Tech.) |
| 2nd Author's Name | Yo Kida |
| 2nd Author's Affiliation | Hachinohe Institute of Technology (Hachinohe Inst. Tech.) |
| 3rd Author's Name | Yoichiro Neo |
| 3rd Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 4th Author's Name | Hidenori Mimura |
| 4th Author's Affiliation | Shizuoka University (Shizuoka Univ.) |
| 5th Author's Name | Katsuhisa Murakami |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Fujio Wakaya |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
| 7th Author's Name | Mikio Takai |
| 7th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-08-04 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-112 |
| Volume (vol) | vol.108 |
| Number (no) | no.177 |
| Page | pp.15-20 |
| #Pages | 6 |
| Date of Issue | 2008-07-28 (ED) |
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