Paper Abstract and Keywords |
Presentation |
2008-08-05 10:25
Fabrication of an ultrahigh luminance field emission display Masayoshi Nagao, Tomoya Yoshida, Seigo Kanemaru (AIST), Kazuhito Nakamura, Yoshihisa Marushima, Masateru Taniguchi, Shigeo Ito (Futaba) ED2008-120 Link to ES Tech. Rep. Archives: ED2008-120 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Field emission display (FED) is currently operated in passive matrix driven mode. By adding a memory function to each pixel of the FED, the luminance can be much more improved. An ultrahigh luminance FED which has a luminance more than 10,000 cd/m$^2$ can be realized by this method. We fabricated field emission display having a memory function, in which FEA and three thin-film transistors (TFTs) are monolithically integrated. The first TFT is an emission-control TFT which control the emission current from the FEA. The second one is a write-enable switch for memory capacitor. The last one is a TFT for discharging the memorized data on capacitor. In this paper, we will report on the fundamental operation of the display prototype and controllability of the luminescent period. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Field emission display / field emitter array / high luminance / thin film transistor / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 177, ED2008-120, pp. 53-58, Aug. 2008. |
Paper # |
ED2008-120 |
Date of Issue |
2008-07-28 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
ED2008-120 Link to ES Tech. Rep. Archives: ED2008-120 |