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Paper Abstract and Keywords
Presentation 2008-08-05 10:25
Fabrication of an ultrahigh luminance field emission display
Masayoshi Nagao, Tomoya Yoshida, Seigo Kanemaru (AIST), Kazuhito Nakamura, Yoshihisa Marushima, Masateru Taniguchi, Shigeo Ito (Futaba) ED2008-120
Abstract (in Japanese) (See Japanese page) 
(in English) Field emission display (FED) is currently operated in passive matrix driven mode. By adding a memory function to each pixel of the FED, the luminance can be much more improved. An ultrahigh luminance FED which has a luminance more than 10,000 cd/m$^2$ can be realized by this method. We fabricated field emission display having a memory function, in which FEA and three thin-film transistors (TFTs) are monolithically integrated. The first TFT is an emission-control TFT which control the emission current from the FEA. The second one is a write-enable switch for memory capacitor. The last one is a TFT for discharging the memorized data on capacitor. In this paper, we will report on the fundamental operation of the display prototype and controllability of the luminescent period.
Keyword (in Japanese) (See Japanese page) 
(in English) Field emission display / field emitter array / high luminance / thin film transistor / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 177, ED2008-120, pp. 53-58, Aug. 2008.
Paper # ED2008-120 
Date of Issue 2008-07-28 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-120

Conference Information
Committee ED  
Conference Date 2008-08-04 - 2008-08-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Sizuoka Univ. Hamamatsu Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2008-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of an ultrahigh luminance field emission display 
Sub Title (in English)  
Keyword(1) Field emission display  
Keyword(2) field emitter array  
Keyword(3) high luminance  
Keyword(4) thin film transistor  
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Keyword(6)  
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1st Author's Name Masayoshi Nagao  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Tomoya Yoshida  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Seigo Kanemaru  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Kazuhito Nakamura  
4th Author's Affiliation Futaba Corporation (Futaba)
5th Author's Name Yoshihisa Marushima  
5th Author's Affiliation Futaba Corporation (Futaba)
6th Author's Name Masateru Taniguchi  
6th Author's Affiliation Futaba Corporation (Futaba)
7th Author's Name Shigeo Ito  
7th Author's Affiliation Futaba Corporation (Futaba)
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Speaker Author-1 
Date Time 2008-08-05 10:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-120 
Volume (vol) vol.108 
Number (no) no.177 
Page pp.53-58 
#Pages 6 
Date of Issue 2008-07-28 (ED) 

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