| Paper Abstract and Keywords |
| Presentation |
2008-08-05 09:50
Application of silicon field emitter arrays for space charge compensation of low energy ion beam Mitsuaki Takeuchi (Innovation Plaza Kyoto, JST), Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Shigeki Sakai (Nissin Ion Equipment), Tsunenobu Kimoto, Junzo Ishikawa (Kyoto Univ.) ED2008-119 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We demonstrated a space charge compensation by using a surface-carbonized silicon field emitter array(Si:C-FEA). The Si:C-FEA showed good emission properties in Ne gas atmosphere of 2.0$\times$10$^{-4}$Pa. As a result, decrease of the beam divergence was observed in a case of the electron supply. It was found that the Si:C-FEA is possible candidate for the SCC of the ion-implantation. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
ion implantation / space charge compensation / field emitter arrays / silicon / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 108, no. 177, ED2008-119, pp. 49-52, Aug. 2008. |
| Paper # |
ED2008-119 |
| Date of Issue |
2008-07-28 (ED) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ED2008-119 |
| Conference Information |
| Committee |
ED |
| Conference Date |
2008-08-04 - 2008-08-05 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Sizuoka Univ. Hamamatsu Campus |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2008-08-ED |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Application of silicon field emitter arrays for space charge compensation of low energy ion beam |
| Sub Title (in English) |
|
| Keyword(1) |
ion implantation |
| Keyword(2) |
space charge compensation |
| Keyword(3) |
field emitter arrays |
| Keyword(4) |
silicon |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Mitsuaki Takeuchi |
| 1st Author's Affiliation |
Innovation Plaza Kyoto, JST (Innovation Plaza Kyoto, JST) |
| 2nd Author's Name |
Yasuhito Gotoh |
| 2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
| 3rd Author's Name |
Hiroshi Tsuji |
| 3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
| 4th Author's Name |
Shigeki Sakai |
| 4th Author's Affiliation |
Nissin Ion Equipment, Co. Ltd. (Nissin Ion Equipment) |
| 5th Author's Name |
Tsunenobu Kimoto |
| 5th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
| 6th Author's Name |
Junzo Ishikawa |
| 6th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2008-08-05 09:50:00 |
| Presentation Time |
25 minutes |
| Registration for |
ED |
| Paper # |
ED2008-119 |
| Volume (vol) |
vol.108 |
| Number (no) |
no.177 |
| Page |
pp.49-52 |
| #Pages |
4 |
| Date of Issue |
2008-07-28 (ED) |