Paper Abstract and Keywords |
Presentation |
2008-08-28 14:20
K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85 Link to ES Tech. Rep. Archives: MW2008-85 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip lines with via-holes through chemically stable sapphire are successfully formed by using a novel laser drilling technique. Integrated AlGaN/GaN MIS-HFETs have in-situ SiN as a gate insulator, which is formed subsequently after the epitaxial growth without any exposure in the air. A typical MIS-HFET shows fmax of 203 GHz. The compact 3-stage amplifier exhibits a small-signal gain as high as 22 dB at 26 GHz with a 3 dB bandwidth of 4 GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN heterojunction FET / MMIC amplifiers / sapphire / via hole / laser drilling / microstrip line / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 195, MW2008-85, pp. 37-40, Aug. 2008. |
Paper # |
MW2008-85 |
Date of Issue |
2008-08-21 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MW2008-85 Link to ES Tech. Rep. Archives: MW2008-85 |
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