Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings[Type 1 Only]
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-09-30 16:20
Gate Structure Dependence of Organic Field Effect Transistor Fabricated by Wet Process
Yohei Hirose, Hirotake Kajii (Osaka Univ.), Kohki Tamura (Tokyo Ohka), Yutaka Ohmori (Osaka Univ.) OME2008-49
Abstract (in Japanese) (See Japanese page) 
(in English) The gate structure dependence of organic field-effect transistors (OFETs) using poly [(9, 9-dialkylfluorene - 2, 7 - dyil)-co-(bithiophene) ] (F8T2) was investigated. In case of top gate type, firstly, we dissolved F8T2 with different kind of solvent, and inspected the solvent dependency. And we couldn’t obtain any solvent dependency of F8T2. We also investigated the effect of interface treatment between source/drain electrode and active layer. Compared with untreated one, treated one showed more efficient carrier injection and threshold voltage shift toward 0V. This result would be attributed to the fact that interface treatment reduced the barrier energy between electrode and active layer. On the other hand, OFETs fabricated by bottom gate structure didn’t work as a transistor. The result of C-V property suggested that in case of bottom gate type, the channel should not be formed.
Keyword (in Japanese) (See Japanese page) 
(in English) organic field-effect transistor / top gate structure / F8T2 / PVP / interface treatment / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 225, OME2008-49, pp. 33-36, Sept. 2008.
Paper # OME2008-49 
Date of Issue 2008-09-23 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2008-49

Conference Information
Committee OME  
Conference Date 2008-09-30 - 2008-09-30 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OME 
Conference Code 2008-09-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gate Structure Dependence of Organic Field Effect Transistor Fabricated by Wet Process 
Sub Title (in English)  
Keyword(1) organic field-effect transistor  
Keyword(2) top gate structure  
Keyword(3) F8T2  
Keyword(4) PVP  
Keyword(5) interface treatment  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yohei Hirose  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hirotake Kajii  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Kohki Tamura  
3rd Author's Affiliation Tokyo Ohka Kogyo (Tokyo Ohka)
4th Author's Name Yutaka Ohmori  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-09-30 16:20:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2008-49 
Volume (vol) vol.108 
Number (no) no.225 
Page pp.33-36 
#Pages 4 
Date of Issue 2008-09-23 (OME) 

[Return to Top Page]

[Return to IEICE Web Page]

(Line Height for English Pages: 1)
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan