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Paper Abstract and Keywords
Presentation 2008-10-10 15:45
Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166
Abstract (in Japanese) (See Japanese page) 
(in English) In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and the gate electrode is used in a general memory and CMOS process. However, the problem by diffusion and the extraction of the dopants is being actualized along with the device shrinkage. Moreover, there is no united report with diffusion and the extraction behavior of the dopants to the new oxidation techniques, radical oxidation has been established in recent years, in addition to the conventional wet oxidation and the dry oxidation. In this report, diffusion and the extraction behavior of the dopants are evaluated by making the MOS capacitor for trial purposes, evaluating the TZDB and the TDDB characteristic, and using the SIMS and the XPS. As a result, we find the thing that it depended on the oxidation technique like the temperature, atmosphere, and the oxidizing species, etc. and kinds of the dopants , behavior is different. In addition, it has been understood to give the serious damage to the oxide film characteristic, ?to deteriorate the TZDB characteristic, ?to form the electronic trap, etc. The mechanism of the characteristic deterioration by the dopants is considered by evaluating the behavior of the dopants by these oxidation and the influences on the oxide film characteristic, and we suggest the oxidation technique of the silicon oxide film without deterioration by the dopants.
Keyword (in Japanese) (See Japanese page) 
(in English) SiO2 / Impurity / Dopant / Radical Oxidation / Electron Trap / TZDB / SIMS / XPS  
Reference Info. IEICE Tech. Rep., vol. 108, no. 236, SDM2008-166, pp. 63-68, Oct. 2008.
Paper # SDM2008-166 
Date of Issue 2008-10-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2008-10-09 - 2008-10-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2008-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Influence of B and P dopants on SiO2 film characteristics 
Sub Title (in English)  
Keyword(1) SiO2  
Keyword(2) Impurity  
Keyword(3) Dopant  
Keyword(4) Radical Oxidation  
Keyword(5) Electron Trap  
Keyword(6) TZDB  
Keyword(7) SIMS  
Keyword(8) XPS  
1st Author's Name Satoshi Nagashima  
1st Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
2nd Author's Name Hiroshi Akahori  
2nd Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
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Speaker Author-1 
Date Time 2008-10-10 15:45:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2008-166 
Volume (vol) vol.108 
Number (no) no.236 
Page pp.63-68 
#Pages 6 
Date of Issue 2008-10-02 (SDM) 

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