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Paper Abstract and Keywords
Presentation 2008-10-23 09:25
High-current InGaAs pin-PD for Microwave output
Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric corp. High Frequency & Optical Device Works) OCS2008-48 OPE2008-91 LQE2008-60
Abstract (in Japanese) (See Japanese page) 
(in English) For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP layer to reduce the capacitance and thermal resistance. The InGaAs absorbing layer is partially doped by p-type dopant to reduce the space-charge-effect. The maximum output power of 115mW is obtained at 10GHz for the 1.55um wavelength. This value is probably limited by the resistance originated from the space-charge effect.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs / pin / PD / photodiode / microwave / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 261, LQE2008-60, pp. 7-10, Oct. 2008.
Paper # LQE2008-60 
Date of Issue 2008-10-16 (OCS, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OCS2008-48 OPE2008-91 LQE2008-60

Conference Information
Committee OCS LQE OPE  
Conference Date 2008-10-23 - 2008-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyushu Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2008-10-OCS-LQE-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-current InGaAs pin-PD for Microwave output 
Sub Title (in English)  
Keyword(1) InGaAs  
Keyword(2) pin  
Keyword(3) PD  
Keyword(4) photodiode  
Keyword(5) microwave  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Eitaro Ishimura  
1st Author's Affiliation Mitsubishi Electric corp. High Frequency & Optical Device Works (Mitsubishi Electric corp. High Frequency & Optical Device Works)
2nd Author's Name Masaharu Nakaji  
2nd Author's Affiliation Mitsubishi Electric corp. High Frequency & Optical Device Works (Mitsubishi Electric corp. High Frequency & Optical Device Works)
3rd Author's Name Chikara Watatani  
3rd Author's Affiliation Mitsubishi Electric corp. High Frequency & Optical Device Works (Mitsubishi Electric corp. High Frequency & Optical Device Works)
4th Author's Name Toru Ota  
4th Author's Affiliation Mitsubishi Electric corp. High Frequency & Optical Device Works (Mitsubishi Electric corp. High Frequency & Optical Device Works)
5th Author's Name Toshitaka Aoyagi  
5th Author's Affiliation Mitsubishi Electric corp. High Frequency & Optical Device Works (Mitsubishi Electric corp. High Frequency & Optical Device Works)
6th Author's Name Takahide Ishikawa  
6th Author's Affiliation Mitsubishi Electric corp. High Frequency & Optical Device Works (Mitsubishi Electric corp. High Frequency & Optical Device Works)
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Speaker Author-1 
Date Time 2008-10-23 09:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OCS2008-48, OPE2008-91, LQE2008-60 
Volume (vol) vol.108 
Number (no) no.259(OCS), no.260(OPE), no.261(LQE) 
Page pp.7-10 
#Pages 4 
Date of Issue 2008-10-16 (OCS, OPE, LQE) 

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