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Paper Abstract and Keywords
Presentation 2008-10-24 10:10
Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer
Norio Iizuka (Toshiba), Toshimasa Shimizu (RCAST, The Univ, of Tokyo), Haruhiko Yoshida, Nobuto Managaki (Toshiba), Sodabanlu hassanet, Masakazu Sugiyama (The Univ. of Tokyo), Yoshiaki Nakano (RCAST, The Univ, of Tokyo) OCS2008-69 OPE2008-112 LQE2008-81
Abstract (in Japanese) (See Japanese page) 
(in English) Intersubband absorption was achieved for a waveguide with SiN as a upper cladding layer. With the purpose of applying to ultrafast optical switches, the waveguide consisted of an AlN lower cladding layer and a GaN core layer with quantum wells inside as well as the SiN upper cladding layer. In addition, spot-size conversion was verified with the SiN cladding. These results lead to the expectation of decrease in the switching energy and to the possibility of realizing integrated photonic devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Intersubband transition / Optical switch / AlN / SiN / Waveguide / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 260, OPE2008-112, pp. 113-116, Oct. 2008.
Paper # OPE2008-112 
Date of Issue 2008-10-16 (OCS, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OCS2008-69 OPE2008-112 LQE2008-81

Conference Information
Committee OCS LQE OPE  
Conference Date 2008-10-23 - 2008-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyushu Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2008-10-OCS-LQE-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Intersubband absorption in GaN/AlN-based waveguide with SiN cladding layer 
Sub Title (in English)  
Keyword(1) Intersubband transition  
Keyword(2) Optical switch  
Keyword(3) AlN  
Keyword(4) SiN  
Keyword(5) Waveguide  
Keyword(6)  
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Keyword(8)  
1st Author's Name Norio Iizuka  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Toshimasa Shimizu  
2nd Author's Affiliation Research Center for Advanced Science and Technology, The University of Tokyo (RCAST, The Univ, of Tokyo)
3rd Author's Name Haruhiko Yoshida  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Nobuto Managaki  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Sodabanlu hassanet  
5th Author's Affiliation Department of Electrical Engineering, The University of Tokyo (The Univ. of Tokyo)
6th Author's Name Masakazu Sugiyama  
6th Author's Affiliation Department of Electrical Engineering, The University of Tokyo (The Univ. of Tokyo)
7th Author's Name Yoshiaki Nakano  
7th Author's Affiliation Research Center for Advanced Science and Technology, The University of Tokyo (RCAST, The Univ, of Tokyo)
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Speaker Author-1 
Date Time 2008-10-24 10:10:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # OCS2008-69, OPE2008-112, LQE2008-81 
Volume (vol) vol.108 
Number (no) no.259(OCS), no.260(OPE), no.261(LQE) 
Page pp.113-116 
#Pages 4 
Date of Issue 2008-10-16 (OCS, OPE, LQE) 

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