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Paper Abstract and Keywords
Presentation 2008-10-30 13:50
Optical properties of Ge nanodots capped by wide gap semiconductors
Haruki Suto, Tomoyoshi Kuroda, Ariyuki Kato, Hiroshi Nishiyama, Yasunobu Inoue, Tadashi Akahane, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2008-77
Abstract (in Japanese) (See Japanese page) 
(in English) Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on a Si(001) substrate using monomethylgermane were investigated by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS).
After the formation of capping layers by Si and SiC on the Ge, SiC nanodot surface, photoluminescence spectra were also measured at 34K.
From the quantitative analysis of XPS spectra, it was estimated that the Ge and SiC nanodots exsisted in the ratio of about 1:2.
PL peak around 1.04 eV, which is derived from the Ge nanodots, was observed.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge nanodot / SiC nanodot / monomethylgermane / STM / XPS / PL / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 269, CPM2008-77, pp. 13-18, Oct. 2008.
Paper # CPM2008-77 
Date of Issue 2008-10-23 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2008-10-30 - 2008-10-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Niigata Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2008-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optical properties of Ge nanodots capped by wide gap semiconductors 
Sub Title (in English)  
Keyword(1) Ge nanodot  
Keyword(2) SiC nanodot  
Keyword(3) monomethylgermane  
Keyword(4) STM  
Keyword(5) XPS  
Keyword(6) PL  
Keyword(7)  
Keyword(8)  
1st Author's Name Haruki Suto  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
2nd Author's Name Tomoyoshi Kuroda  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
3rd Author's Name Ariyuki Kato  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
4th Author's Name Hiroshi Nishiyama  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
5th Author's Name Yasunobu Inoue  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
6th Author's Name Tadashi Akahane  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
7th Author's Name Masasuke Takata  
7th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
8th Author's Name Kanji Yasui  
8th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
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Speaker Author-1 
Date Time 2008-10-30 13:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2008-77 
Volume (vol) vol.108 
Number (no) no.269 
Page pp.13-18 
#Pages 6 
Date of Issue 2008-10-23 (CPM) 

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