Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-10-31 13:00
Fabrication of P3HT Field Effect Transistor Using Organic Insulating Materials by Solution Process
Kosuke Narita, Hiroshi Yamauchi, Masaaki Iizuka, Shigekazu Kuniyoshi, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2008-50
Abstract (in Japanese) (See Japanese page) 
(in English) In this work, the evaluation of gate insulating materials for organic field effect transistor (OFET) and improvement of air-stability of OFET were performed toward practical use of OFETs. To fabricate OFETs by solution process, the gate insulating material is not dissolved in solvent for organic semiconductor materials. We chose a gate insulating material having solvent resistance and examined electrical characteristics of the gate insulating layer. In general, electrical characteristics of organic semiconductors are unstable in the ambient atmosphere. A passivation film was employed to avoid the exposure to air and air-stable OFETs are realized by solution process.
Keyword (in Japanese) (See Japanese page) 
(in English) solution process / OFET / insulating materials / passivation materials / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 272, OME2008-50, pp. 1-4, Oct. 2008.
Paper # OME2008-50 
Date of Issue 2008-10-24 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2008-50

Conference Information
Committee OME  
Conference Date 2008-10-31 - 2008-10-31 
Place (in Japanese) (See Japanese page) 
Place (in English) ToKyo Univ. Faculty of Engineering Bldg.6 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sensor, Device, etc 
Paper Information
Registration To OME 
Conference Code 2008-10-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of P3HT Field Effect Transistor Using Organic Insulating Materials by Solution Process 
Sub Title (in English)  
Keyword(1) solution process  
Keyword(2) OFET  
Keyword(3) insulating materials  
Keyword(4) passivation materials  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kosuke Narita  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Hiroshi Yamauchi  
2nd Author's Affiliation Chiba University (Chiba Univ.)
3rd Author's Name Masaaki Iizuka  
3rd Author's Affiliation Chiba University (Chiba Univ.)
4th Author's Name Shigekazu Kuniyoshi  
4th Author's Affiliation Chiba University (Chiba Univ.)
5th Author's Name Masatoshi Sakai  
5th Author's Affiliation Chiba University (Chiba Univ.)
6th Author's Name Masakazu Nakamura  
6th Author's Affiliation Chiba University (Chiba Univ.)
7th Author's Name Kazuhiro Kudo  
7th Author's Affiliation Chiba University (Chiba Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-10-31 13:00:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2008-50 
Volume (vol) vol.108 
Number (no) no.272 
Page pp.1-4 
#Pages 4 
Date of Issue 2008-10-24 (OME) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan