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| Presentation | 2008-10-31 13:00 Fabrication of P3HT Field Effect Transistor Using Organic Insulating Materials by Solution Process Kosuke Narita, Hiroshi Yamauchi, Masaaki Iizuka, Shigekazu Kuniyoshi, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.)  OME2008-50 Link to ES Tech. Rep. Archives: OME2008-50 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this work, the evaluation of gate insulating materials for organic field effect transistor (OFET) and improvement of air-stability of OFET were performed toward practical use of OFETs. To fabricate OFETs by solution process, the gate insulating material is not dissolved in solvent for organic semiconductor materials. We chose a gate insulating material having solvent resistance and examined electrical characteristics of the gate insulating layer. In general, electrical characteristics of organic semiconductors are unstable in the ambient atmosphere. A passivation film was employed to avoid the exposure to air and air-stable OFETs are realized by solution process. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | solution process / OFET / insulating materials / passivation materials / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 272, OME2008-50, pp. 1-4, Oct. 2008. | |
| Paper # | OME2008-50 | |
| Date of Issue | 2008-10-24 (OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2008-50 Link to ES Tech. Rep. Archives: OME2008-50 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2008-10-31 - 2008-10-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | ToKyo Univ. Faculty of Engineering Bldg.6 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sensor, Device, etc |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2008-10-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of P3HT Field Effect Transistor Using Organic Insulating Materials by Solution Process |
| Sub Title (in English) | |
| Keyword(1) | solution process |
| Keyword(2) | OFET |
| Keyword(3) | insulating materials |
| Keyword(4) | passivation materials |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kosuke Narita |
| 1st Author's Affiliation | Chiba University (Chiba Univ.) |
| 2nd Author's Name | Hiroshi Yamauchi |
| 2nd Author's Affiliation | Chiba University (Chiba Univ.) |
| 3rd Author's Name | Masaaki Iizuka |
| 3rd Author's Affiliation | Chiba University (Chiba Univ.) |
| 4th Author's Name | Shigekazu Kuniyoshi |
| 4th Author's Affiliation | Chiba University (Chiba Univ.) |
| 5th Author's Name | Masatoshi Sakai |
| 5th Author's Affiliation | Chiba University (Chiba Univ.) |
| 6th Author's Name | Masakazu Nakamura |
| 6th Author's Affiliation | Chiba University (Chiba Univ.) |
| 7th Author's Name | Kazuhiro Kudo |
| 7th Author's Affiliation | Chiba University (Chiba Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-10-31 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | OME |
| Paper # | OME2008-50 |
| Volume (vol) | vol.108 |
| Number (no) | no.272 |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2008-10-24 (OME) |
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