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| Presentation | 2008-11-14 16:15 Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.)  SDM2008-182 Link to ES Tech. Rep. Archives: SDM2008-182 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To understand the device physics of SNWTs and assess their performance limits, we have recently developed a new self-consistent and three-dimensional quantum simulator based on a direct solution of the Wigner transport equation, coupled with multi-dimensional Schrödinger-Poisson algorithm. In this paper, we present its validity by comparing with semiclassical Boltzmann and non-equilibrium Green’s function approaches. Further, we discuss on a scaling limit of SNWTs, and demonstrate that the influence of source-drain tunneling begins to appear notably as the gate length becomes shorter than 6nm and also that the semiclassical Boltzmann simulation without the source-drain tunneling underestimates a minimum gate length to make electrostatically “well-tempered” SNWTs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si-nanowire transistors / quantum transport / Wigner function model / source-drain tunneling / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 292, SDM2008-182, pp. 77-82, Nov. 2008. | |
| Paper # | SDM2008-182 | |
| Date of Issue | 2008-11-06 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-182 Link to ES Tech. Rep. Archives: SDM2008-182 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-11-13 - 2008-11-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors |
| Sub Title (in English) | |
| Keyword(1) | Si-nanowire transistors |
| Keyword(2) | quantum transport |
| Keyword(3) | Wigner function model |
| Keyword(4) | source-drain tunneling |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Yoshihiro Yamada |
| 1st Author's Affiliation | Kobe University (Kobe Univ.) |
| 2nd Author's Name | Hideaki Tsuchiya |
| 2nd Author's Affiliation | Kobe University (Kobe Univ.) |
| 3rd Author's Name | Matsuto Ogawa |
| 3rd Author's Affiliation | Kobe University (Kobe Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-11-14 16:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-182 |
| Volume (vol) | vol.108 |
| Number (no) | no.292 |
| Page | pp.77-82 |
| #Pages | 6 |
| Date of Issue | 2008-11-06 (SDM) |
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