Paper Abstract and Keywords |
Presentation |
2008-11-14 16:40
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183 Link to ES Tech. Rep. Archives: SDM2008-183 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin film and nanowire configurations. We employed a first principles calculation to identify the bandstructure parameters such as band splitting energy and transport effective mass. As a result, we found that bulk Si and Si thin film have similar strain effects on the bandstructure parameters under uniaxial <110> strain. Particularly, the effective mass reduction of electrons due to uniaxial <110> tensile strain is expected even in Si thin film. On the other hand, Si nanowire structure has lighter transport effective mass than the other structures, regardless of the amount of uniaxial strain. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
First-principles simulation / strained-Si / nanoscaled channel / effective mass / valley splitting / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 292, SDM2008-183, pp. 83-88, Nov. 2008. |
Paper # |
SDM2008-183 |
Date of Issue |
2008-11-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-183 Link to ES Tech. Rep. Archives: SDM2008-183 |
Conference Information |
Committee |
SDM |
Conference Date |
2008-11-13 - 2008-11-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit Simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects |
Sub Title (in English) |
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Keyword(1) |
First-principles simulation |
Keyword(2) |
strained-Si |
Keyword(3) |
nanoscaled channel |
Keyword(4) |
effective mass |
Keyword(5) |
valley splitting |
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1st Author's Name |
Tadashi Maegawa |
1st Author's Affiliation |
Kobe University (Kobe Univ.) |
2nd Author's Name |
Tsuneki Yamauchi |
2nd Author's Affiliation |
Kobe University (Kobe Univ.) |
3rd Author's Name |
Takeshi Hara |
3rd Author's Affiliation |
Kobe University (Kobe Univ.) |
4th Author's Name |
Hideaki Tsuchiya |
4th Author's Affiliation |
Kobe University (Kobe Univ.) |
5th Author's Name |
Matsuto Ogawa |
5th Author's Affiliation |
Kobe University (Kobe Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-11-14 16:40:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-183 |
Volume (vol) |
vol.108 |
Number (no) |
no.292 |
Page |
pp.83-88 |
#Pages |
6 |
Date of Issue |
2008-11-06 (SDM) |
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