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Paper Abstract and Keywords
Presentation 2008-11-28 16:10
Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors
Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127
Abstract (in Japanese) (See Japanese page) 
(in English) The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated for ppm-order detection. We found that the 1 ppm hydrogen in air can be detected by the fabricated devices as a current variation of 1.6 mA. By using the least-square fit to the experimental data, the reliable lower detection value of hydrogen concentration for the present device can be estimated to be about 0.5 ppm, i.e., a natural hydrogen concentration in the air. In addition, the shorter turn-on and turn-off transient times have been estimated to be about 23 and 33 seconds at 110oC, respectively, in the case of the 100 ppm hydrogen.
Keyword (in Japanese) (See Japanese page) 
(in English) hydrogen gas sensor / AlGaN/GaN / high electron mobility transistor / catalytic action / part par million / palladium / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 321, ED2008-183, pp. 155-159, Nov. 2008.
Paper # ED2008-183 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-183 CPM2008-132 LQE2008-127

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors 
Sub Title (in English)  
Keyword(1) hydrogen gas sensor  
Keyword(2) AlGaN/GaN  
Keyword(3) high electron mobility transistor  
Keyword(4) catalytic action  
Keyword(5) part par million  
Keyword(6) palladium  
Keyword(7)  
Keyword(8)  
1st Author's Name Noriyuki Takahashi  
1st Author's Affiliation Tokyo Metropolitan University (Tokyo Metropolitan Univ)
2nd Author's Name Seiji Nakamura  
2nd Author's Affiliation Tokyo Metropolitan University (Tokyo Metropolitan Univ)
3rd Author's Name Tsugunori Okumura  
3rd Author's Affiliation Tokyo Metropolitan University (Tokyo Metropolitan Univ)
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Speaker Author-1 
Date Time 2008-11-28 16:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-183, CPM2008-132, LQE2008-127 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.155-159 
#Pages 5 
Date of Issue 2008-11-20 (ED, CPM, LQE) 

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