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Paper Abstract and Keywords
Presentation 2008-12-05 10:50
Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays
Hideharu Matsuura, Miyuki Takahashi, Kazunori Kohara, Kazuyo Yamamoto, Taketoshi Maeda, Yoshitaka Kagawa (Osaka Electro-Communication University) SDM2008-185
Abstract (in Japanese) (See Japanese page) 
(in English) In order to efficiently collect electrons produced by X-rays, a silicon drift detector (SDD) with Peltier cooling has MOSFETs (metal-oxide-semiconductor field-effect transistor) on the opposite plane to the X-ray incidence plane, which raise the price of SDD. To lower the price, a SDD without MOSFETs has been proposed and experimentally investigated. To detect fluorescent X-rays with high energies, such as the X-ray fluorescence of Cd, a new structure of SDD fabricated using high-resistivity Si has been proposed.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon Drift Detector / X-ray Si Detector / New Structure for X-ray Si Detector / Low-cost X-ray Si Detector / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 335, SDM2008-185, pp. 5-10, Dec. 2008.
Paper # SDM2008-185 
Date of Issue 2008-11-28 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2008-12-05 - 2008-12-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University, Katsura Campus, A1-001 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Characterization of Si and Si-related Materials and Devices 
Paper Information
Registration To SDM 
Conference Code 2008-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays 
Sub Title (in English)  
Keyword(1) Silicon Drift Detector  
Keyword(2) X-ray Si Detector  
Keyword(3) New Structure for X-ray Si Detector  
Keyword(4) Low-cost X-ray Si Detector  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideharu Matsuura  
1st Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication University)
2nd Author's Name Miyuki Takahashi  
2nd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication University)
3rd Author's Name Kazunori Kohara  
3rd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication University)
4th Author's Name Kazuyo Yamamoto  
4th Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication University)
5th Author's Name Taketoshi Maeda  
5th Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication University)
6th Author's Name Yoshitaka Kagawa  
6th Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication University)
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Speaker Author-1 
Date Time 2008-12-05 10:50:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2008-185 
Volume (vol) vol.108 
Number (no) no.335 
Page pp.5-10 
#Pages 6 
Date of Issue 2008-11-28 (SDM) 

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