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Paper Abstract and Keywords
Presentation 2008-12-11 13:30
[Poster Presentation] Buried Photodiode Structure for High-Speed Charge Transfer
Hiroaki Takeshita, Tomonari Sawada, Kana Ito, Tomohiro Iwahori, Shoji Kawahito (Shizuoka Univ.) ICD2008-102
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents a new type of buried photodiode structure for high speed charge transfer.The width of the buried photodiode is widened along the derection of chrage transfer. This generates a constant fringing
field in buried photodiode and makes charge transfer along transfer
direction faster. Fringing field distribution and charge transfer time of the
structure are investigated using simulations. Simulation results show that the charge transfer time of 0.522ns can be realized for the transfer range of 6$\mu m$.
Keyword (in Japanese) (See Japanese page) 
(in English) High-speed charge transfer / Fringing field / Buried photodiode / N layer / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 347, ICD2008-102, pp. 13-17, Dec. 2008.
Paper # ICD2008-102 
Date of Issue 2008-12-04 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2008-12-11 - 2008-12-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Inst. Tech., Ohokayama Campus, Kokusa-Kouryu-Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Workshop for Graduate Student and Young Researchers 
Paper Information
Registration To ICD 
Conference Code 2008-12-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Buried Photodiode Structure for High-Speed Charge Transfer 
Sub Title (in English)  
Keyword(1) High-speed charge transfer  
Keyword(2) Fringing field  
Keyword(3) Buried photodiode  
Keyword(4) N layer  
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1st Author's Name Hiroaki Takeshita  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Tomonari Sawada  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Kana Ito  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Tomohiro Iwahori  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Shoji Kawahito  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2008-12-11 13:30:00 
Presentation Time 165 minutes 
Registration for ICD 
Paper # ICD2008-102 
Volume (vol) vol.108 
Number (no) no.347 
Page pp.13-17 
#Pages 5 
Date of Issue 2008-12-04 (ICD) 

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