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| Presentation | 2008-12-20 11:25 Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's Nobuhiro Magome, Takuya Nishimura (Tohoku Univ.), Irina Khmyrova (Univ. of Aizu), Tetsuya Suemitsu (Tohoku Univ.), Wojtek Knap (Univ. Montpellier2), Taiichi Otsuji (Tohoku Univ.)  ED2008-195 Link to ES Tech. Rep. Archives: ED2008-195 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Influence of fringing electric field due to nonideality of the gate-two-dimensional electron gas (2DEG) channel capacitance on fundamental resonant frequency of plasma waves in the high-electron mobility transistor (HEMT) channel was investigated. Cascaded transmission line (TL) equivalent circuit model was developed to represent the gated and ungated fringed regions of the 2DEG channel. Spatial distribution of sheet electron density in the fringed region of the 2DEG channel and expression for fundamental resonant frequency of plasma oscillation were obtained. Results of calculation and IsSpice simulation based on cascaded TL model show that fringing effects can be the cause of the fundamental plasma frequency reduction. The results obtained are in rather good agreement with experimental data. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | resonant frequency / plasma waves / HEMT / THz / fringing effects / cascaded TL model / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 369, ED2008-195, pp. 53-58, Dec. 2008. | |
| Paper # | ED2008-195 | |
| Date of Issue | 2008-12-12 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-195 Link to ES Tech. Rep. Archives: ED2008-195 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2008-12-19 - 2008-12-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, THz-wave Devices and Systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's |
| Sub Title (in English) | |
| Keyword(1) | resonant frequency |
| Keyword(2) | plasma waves |
| Keyword(3) | HEMT |
| Keyword(4) | THz |
| Keyword(5) | fringing effects |
| Keyword(6) | cascaded TL model |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Nobuhiro Magome |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Takuya Nishimura |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Irina Khmyrova |
| 3rd Author's Affiliation | University of Aizu (Univ. of Aizu) |
| 4th Author's Name | Tetsuya Suemitsu |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Wojtek Knap |
| 5th Author's Affiliation | CNRS,Universite Montpellier2 (Univ. Montpellier2) |
| 6th Author's Name | Taiichi Otsuji |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-12-20 11:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-195 |
| Volume (vol) | vol.108 |
| Number (no) | no.369 |
| Page | pp.53-58 |
| #Pages | 6 |
| Date of Issue | 2008-12-12 (ED) |
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