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Paper Abstract and Keywords
Presentation 2009-01-14 15:25
GaN-based Natural Super Junction Diodes
Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2008-202 MW2008-167
Abstract (in Japanese) (See Japanese page) 
(in English) We propose a new breakdown mechanism of GaN-based electron devices called “Natural Super Junction”. The junction model is supported by device simulations and experiments for newly developed multi-channel diodes with a dual-recessed structure. Based on the model, the on-resistance of the diodes can be reduced keeping high breakdown voltages. The fabricated diode achieves extremely high breakdown voltage of 9300 V with low on-state resistance RonA of 176 mcm2, which is the record low value for GaN-based diodes with the breakdown voltage over 9000 V.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / diode / HFET / piezoelectric / polarization / breakdown voltage / simulation / super junction  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-202, pp. 23-27, Jan. 2009.
Paper # ED2008-202 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-202 MW2008-167

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN-based Natural Super Junction Diodes 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) diode  
Keyword(3) HFET  
Keyword(4) piezoelectric  
Keyword(5) polarization  
Keyword(6) breakdown voltage  
Keyword(7) simulation  
Keyword(8) super junction  
1st Author's Name Hidetoshi Ishida  
1st Author's Affiliation Panasonic Corporation (Panasonic Co.)
2nd Author's Name Daisuke Shibata  
2nd Author's Affiliation Panasonic Corporation (Panasonic Co.)
3rd Author's Name Hisayoshi Matsuo  
3rd Author's Affiliation Panasonic Corporation (Panasonic Co.)
4th Author's Name Manabu Yanagihara  
4th Author's Affiliation Panasonic Corporation (Panasonic Co.)
5th Author's Name Yasuhiro Uemoto  
5th Author's Affiliation Panasonic Corporation (Panasonic Co.)
6th Author's Name Tetsuzo Ueda  
6th Author's Affiliation Panasonic Corporation (Panasonic Co.)
7th Author's Name Tsuyoshi Tanaka  
7th Author's Affiliation Panasonic Corporation (Panasonic Co.)
8th Author's Name Daisuke Ueda  
8th Author's Affiliation Panasonic Corporation (Panasonic Co.)
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Speaker Author-1 
Date Time 2009-01-14 15:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-202, MW2008-167 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.23-27 
#Pages 5 
Date of Issue 2009-01-07 (ED, MW) 

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