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| Presentation | 2009-01-16 11:45 Mesa-gate AlGaN/GaN HEMT having nano-width channels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)  ED2008-223 MW2008-188 Link to ES Tech. Rep. Archives: ED2008-223 MW2008-188 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where a periodic trench structure was fabricated just under a gate electrode. This resulted in the shallower threshold voltage, the lower sub-threshold slope and higher current drivability, as compared to a standard planar-type HEMT. In addition, the MMC HEMT showed a low knee voltage even in a long spacing between the gate and drain electrodes, which is required for the high-blocking voltage operation of power switching transistors. We also observed an excellent current stability in a saturation region in the MMC device, probably due to an effective radiation of heat from both mesa sides of channel. Both planar and MMC devices showed similar drain leakage characteristics and breakdown voltages under off-state operation, indicating no significant degradation on the break down characteristics in AlGaN/GaN HEMTs even when a periodic trench structure is applied to a gate region. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlGaN / High Electron Mobility Transistor(HEMT) / Multi-Mesa-Channel(MMC) structure / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 376, ED2008-223, pp. 141-144, Jan. 2009. | |
| Paper # | ED2008-223 | |
| Date of Issue | 2009-01-07 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-223 MW2008-188 Link to ES Tech. Rep. Archives: ED2008-223 MW2008-188 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2009-01-14 - 2009-01-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor ICs, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mesa-gate AlGaN/GaN HEMT having nano-width channels |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | High Electron Mobility Transistor(HEMT) |
| Keyword(4) | Multi-Mesa-Channel(MMC) structure |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Kota Ohi |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Tamotsu Hashizume |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-01-16 11:45:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-223, MW2008-188 |
| Volume (vol) | vol.108 |
| Number (no) | no.376(ED), no.377(MW) |
| Page | pp.141-144 |
| #Pages | 4 |
| Date of Issue | 2009-01-07 (ED, MW) |
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