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Paper Abstract and Keywords
Presentation 2009-02-27 10:15
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices
Daisuke Nakata, Shaharin Fadzli Abd Rahman, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ/PRESTO,JST) ED2008-235 SDM2008-227
Abstract (in Japanese) (See Japanese page) 
(in English) Three-branch nanowire junction devices show nonlinear electrical characteristics from the low temperature to the room temperature, and they are expected to be applied to logic and high frequency circuits. In such application, understanding the mechanism and control of characteristic are necessary. In this study GaAs-based three-branch nanowire junction devises having Schottky wrap gates are fabricated and characterized in detail, including the effect of Schottky wrap gate and nanowire length on nonlinear characteristics and operation speed.
Keyword (in Japanese) (See Japanese page) 
(in English) Three-Branch Nanowire Junction Device / Nonlinear Characteristic / Operation Speed / GaAs / Wrap Gate (WPG) / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 437, ED2008-235, pp. 63-68, Feb. 2009.
Paper # ED2008-235 
Date of Issue 2009-02-19 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-235 SDM2008-227

Conference Information
Committee SDM ED  
Conference Date 2009-02-26 - 2009-02-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2009-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices 
Sub Title (in English)  
Keyword(1) Three-Branch Nanowire Junction Device  
Keyword(2) Nonlinear Characteristic  
Keyword(3) Operation Speed  
Keyword(4) GaAs  
Keyword(5) Wrap Gate (WPG)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Daisuke Nakata  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Shaharin Fadzli Abd Rahman  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Yuta Shiratori  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Seiya Kasai  
4th Author's Affiliation Hokkaido University (Hokkaido Univ/PRESTO,JST)
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Speaker Author-1 
Date Time 2009-02-27 10:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-235, SDM2008-227 
Volume (vol) vol.108 
Number (no) no.437(ED), no.438(SDM) 
Page pp.63-68 
#Pages 6 
Date of Issue 2009-02-19 (ED, SDM) 

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