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Paper Abstract and Keywords
Presentation 2009-04-23 15:30
Ferroelectric-Gate Thin-Film-Transistor Memory Using Epitaxially Grown Composite-Oxide-Film
Yukihiro Kaneko, Hiroyuki Tanaka, Yoshihisa Kato, Yasuhiro Shimada (Panasonic Corp.) ED2009-5
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a ferroelectric-gate thin-film transistor (FeTFT) composed of heteroepitaxially stacked oxide materials. A bottom gate electrode of SrRuO3 (SRO), a ferroelectric film of Pb(Zr,Ti)O3 (PZT) and a semiconductor film of ZnO are grown on a SrTiO3 (STO) substrate. Structural characterization shows a heteroepitaxy of the fabricated ZnO/PZT/SRO/STO structure with good crystalline quality and the absence of an interface reaction layer. When the polarization direction of the PZT film is downward, all the electrons across the ZnO film are depleted. When the polarization direction is upward, on the other hand, quasi-two-dimensional electron gas is accumulated at the ZnO/PZT interface. Drain and source electrodes of Pt/Ti are formed on the ZnO film and in-plane conduction at the ZnO/PZT interface is probed. When gate voltages applied to the bottom electrode are swept between -10 and 10 V, the on/off ratio of drain currents is higher than 10^5. Such a high on/off ratio is preserved even after 10^5 s. In addition, the FeTFT can write and read multi level datum.
Keyword (in Japanese) (See Japanese page) 
(in English) ferroelectric / ferroelectric-gate field-effect-transistor / ferroelectric memory / ZnO / SrTiO3 / SrRuO3 / Pb(Zr,Ti)O3 / oxide semiconductor  
Reference Info. IEICE Tech. Rep., vol. 109, no. 16, ED2009-5, pp. 17-22, April 2009.
Paper # ED2009-5 
Date of Issue 2009-04-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-5

Conference Information
Committee ED  
Conference Date 2009-04-23 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT, etc 
Paper Information
Registration To ED 
Conference Code 2009-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ferroelectric-Gate Thin-Film-Transistor Memory Using Epitaxially Grown Composite-Oxide-Film 
Sub Title (in English)  
Keyword(1) ferroelectric  
Keyword(2) ferroelectric-gate field-effect-transistor  
Keyword(3) ferroelectric memory  
Keyword(4) ZnO  
Keyword(5) SrTiO3  
Keyword(6) SrRuO3  
Keyword(7) Pb(Zr,Ti)O3  
Keyword(8) oxide semiconductor  
1st Author's Name Yukihiro Kaneko  
1st Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation (Panasonic Corp.)
2nd Author's Name Hiroyuki Tanaka  
2nd Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation (Panasonic Corp.)
3rd Author's Name Yoshihisa Kato  
3rd Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation (Panasonic Corp.)
4th Author's Name Yasuhiro Shimada  
4th Author's Affiliation Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation (Panasonic Corp.)
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Speaker Author-1 
Date Time 2009-04-23 15:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-5 
Volume (vol) vol.109 
Number (no) no.16 
Page pp.17-22 
#Pages 6 
Date of Issue 2009-04-16 (ED) 

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