Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2009-04-24 13:55
Solution preparation effect on n-type field-effect-transistor characteristics using PCBM
Kosuke Hamachi, Takeomi Morita, Shuichi Nagamatsu, Wataru Takashima (Kyushu Inst. of Tech.), Shuishiro Kuwajima (Kyoto Uni.), Keiichi Kaneto (Kyushu Inst. of Tech.) SDM2009-1 OME2009-1
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated the preparation dependence on the electronic characteristics of n-type organic field-effect transistors (OFETs) consisted of [6.6]-Phenyl C61-Butyric acid Methyl ester (PCBM) as active layer. Although field-effect mobility, threshold voltage and on-current were almost stationary, the off-current was strongly changed with the agitation time of the solution. A cluster distribution model has been proposed to explain the results.
Keyword (in Japanese) (See Japanese page) 
(in English) OFET / n-type / fullerene / PCBM / cluster / solution / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 20, OME2009-1, pp. 1-4, April 2009.
Paper # OME2009-1 
Date of Issue 2009-04-17 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-1 OME2009-1

Conference Information
Committee OME SDM  
Conference Date 2009-04-24 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) AIST Kyushu-center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT Materials, Devices, Applications, Analysis and Others related to SDM and OME activity 
Paper Information
Registration To OME 
Conference Code 2009-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Solution preparation effect on n-type field-effect-transistor characteristics using PCBM 
Sub Title (in English)  
Keyword(1) OFET  
Keyword(2) n-type  
Keyword(3) fullerene  
Keyword(4) PCBM  
Keyword(5) cluster  
Keyword(6) solution  
Keyword(7)  
Keyword(8)  
1st Author's Name Kosuke Hamachi  
1st Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
2nd Author's Name Takeomi Morita  
2nd Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
3rd Author's Name Shuichi Nagamatsu  
3rd Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
4th Author's Name Wataru Takashima  
4th Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
5th Author's Name Shuishiro Kuwajima  
5th Author's Affiliation Kyoto University (Kyoto Uni.)
6th Author's Name Keiichi Kaneto  
6th Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. of Tech.)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2009-04-24 13:55:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # SDM2009-1, OME2009-1 
Volume (vol) vol.109 
Number (no) no.19(SDM), no.20(OME) 
Page pp.1-4 
#Pages 4 
Date of Issue 2009-04-17 (SDM, OME) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan